نتایج جستجو برای: piezoelectric thin film

تعداد نتایج: 199311  

2003
C. Wetzel T. Takeuchi S. Nitta S. Yamaguchi H. Amano I. Akasaki

Photoreflection and photoluminescence spectroscopies have been used to identify details of the electronic bandstructure in GaInN/GaN strained heterostructures and multiple quantum well structures. Franz-Keldysh oscillations in the ternary layers are identified in both systems revealing large piezoelectric fields of 240 kV/cm (x=0.079, thin film) and 0.65 MV/cm (x=0.187). From spatially resolved...

2001
Alexei Gruverman Orlando Auciello Hiroshi Tokumoto

Scanning force microscopy (SFM) is becoming a powerful technique with great potential both for imaging and for control of domain structures in ferroelectric materials at the nanometer scale. Application of SFM to visualization of domain structures in ferroelectric thin films is described. Imaging methods of ferroelectric domains are based on the detection of surface charges in the noncontact mo...

2015
Khaled Sayed Elbadawi Ramadan Stephane Evoy Sefer Bora Lisesivdin

Piezoelectric aluminum nitride thin films were deposited on aluminum-molybdenum (AlMo) metallic nanocomposites using reactive DC sputtering at room temperature. The effect of sputtering parameters on film properties was assessed. A comparative study between AlN grown on AlMo and pure aluminum showed an equivalent (002) crystallographic texture. The piezoelectric coefficients were measured to be...

2001
Y. J. Liu H. Fan

A weakly-singular form of the piezoelectric boundary integral equation (BIE) formulation is introduced in this paper, which eliminates the calculation of any singular integrals in the piezoelectric BIE. The crucial question of whether or not the piezoelectric BIE will degenerate when applied to crack and thin shell-like problems is discussed. It can be shown analytically that the conventional B...

M. Ramya, S. Ganesan,

Abstract: Different thickness of Cu2S thin films were prepared by vacuum evaporation under a pressure of 10-6 torr at an evaporation rate of 3Å /sec. Cu2S has direct band gap energy and indirect band gap energy at 1.2eV and 1.8 eV respectively. This paper presents the analysis of structural and optical properties of the Cu2S thin film by X-ray diffractometer (XRD) and UV-Vis-NIR Spectrophotomet...

Journal: :journal of nanostructures 2013
m. m. larijani p. balashabadi h. seyedi e. jafari-.khamse

titanium nitride-copper (tin-cu) nanocomposite films were deposited onto stainless steel substrate using hollow cathode discharge ion plating technique. the influence of cu content in the range of 2-7 at.% on the microstructure, morphology and mechanical properties of deposited films were investigated. structural properties of the films were studied by x-ray diffraction pattern. topography of t...

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