Isolated vertically aligned carbon nanofibers (VACNFs) have been grown using dc plasma-enhanced chemical vapor deposition, and the effects of the growth conditions on VACNF morphology and composition have been determined in substantial detail. The dependence of the growth rate, tip and base diameters, and chemical composition of isolated VACNFs on the growth parameters is described, including t...

The quality of intrinsic amorphous silicon films prepared by different deposition techniques was investigated. For very high frequency glow discharge, both the substrate temperature as well as the hydrogen dilution were varied. These layers were compared to hot wire material produced at comparable temperatures. To study the stability of these films, an optimised degradation method was developed...

Uniformly distributed ZnO nanorods have been grown by plasma-enhanced chemical vapor deposition using a two-step process. By controlling the oxygen content in the gas mixture during the nucleation and growth steps, no catalyst is required for the formation of ZnO nanorods. High-resolution transmission electron microscopy studies show that ZnO nanorods are single crystals and that they grow alon...

Oxidation of amorphous silicon (a-Si) nanoparticles grown by plasma-enhanced chemical vapor deposition were investigated. Their hydrogen content has a great influence on the oxidation rate at low temperature. When the mass gain is recorded during a heating ramp in dry air, an oxidation process at low temperature is identified with an onset around 250 °C. This temperature onset is similar to tha...

Diamond-like nanocomposite (DLN) thin films were deposited on pyrex glass or silicon substrate by plasma enhanced chemical vapor deposition (PECVD) method. These types of films have their unique number of structural, mechanical and tribological properties, which are quite similar with MEMS material properties. DLN films provide a number of unique and

The steady-state photocarrier grating (SSPG) technique has been employed to investigate the field dependence of different polymorphous and microcrystalline silicon samples prepared by plasma enhanced chemical vapor deposition technique. The field-dependent experimental data at different temperatures are analyzed using two different approaches based on the small-signal photocurrent to extract mo...

The principal object of this paper is to develop a neural network model, which can simulate the plasma enhanced chemical vapor deposition (PECVD) process in TFT-Array procedure. Then the Boolean logic rules are extracted from the trained neural network in order to establish a knowledge base of expert system. The input data of neural network was collected form the process parameters of PECVD mac...

We have performed a detailed structural and optical investigation of hydrogenated nanocrystalline silicon (nc-Si:H) thin films prepared by plasma-enhanced chemical vapor deposition. The microstructural properties of these thin films are characterized and interpreted physically based on the growth mechanism. Infrared spectroscopy reveals that the bonded hydrogen in a platelet-like configuration,...

Microcrystalline silicon (μc-Si:H) of truly intrinsic character can be deposited by plasmaenhanced chemical vapor deposition (PECVD) when dichlorosilane (SiH2Cl2) is added to the SiH4-H2 source gas. A dark-conductivity of 5·10 -8 S/cm, activation energy of 0.62 eV and photoconductivity of 1·10 S/cm are obtained. The optical bandgap for this material is approximately 1.1 eV. No special gas purif...

Improvement in the electrical properties of the GaAs surface has been accomplished using a room-temperature hydrogen sulfide plasma. The surface has then been protected by a 300 “C plasma enhanced chemical vapor deposition (PECVD) SiO, film. This treatment is highly reproducible due to computer control of process parameters and long-lasting due to the SiOz cap. Improved C-V characteristics were...