نتایج جستجو برای: plasma enhanced atomic layer deposition
تعداد نتایج: 1089423 فیلتر نتایج به سال:
Low-temperature epitaxial growth of AlN ultrathin films was realized by atomic layer deposition (ALD) together with the layer-by-layer, in-situ atomic layer annealing (ALA), instead of a high growth temperature which is needed in conventional epitaxial growth techniques. By applying the ALA with the Ar plasma treatment in each ALD cycle, the AlN thin film was converted dramatically from the amo...
A widely used application of the atomic layer deposition (ALD) and chemical vapour deposition (CVD) methods is the preparation of permeation barrier layers against water vapour. Especially in the field of organic electronics, these films are highly demanded as such devices are very sensitive to moisture and oxygen. In this work, multilayers of aluminium oxide (AlO x ) and plasma polymer (PP) we...
Nanoporous alumina membranes exhibit high pore densities, well-controlled and uniform pore sizes, as well as straight pores. Owing to these unusual properties, nanoporous alumina membranes are currently being considered for use in implantable sensor membranes and water purification membranes. Atomic layer deposition is a thin-film growth process that may be used to modify the pore size in a nan...
As a media aluminum oxide (Al2O3) thin films deposited by radio frequency plasma-assisted atomic layer deposition (RF-PA-ALD) method were employed to explore the magnetic field effect. Different from normal plasma-assisted ALD (PA-ALD) technology a magnetic field was applied during the whole deposition process. With this novel ALD technology it obtains that the deposition rate in each cycle of ...
Correction for 'Enhanced photoelectrochemical water oxidation via atomic layer deposition of TiO2 on fluorine-doped tin oxide nanoparticle films' by Isvar A. Cordova, et al., Nanoscale, 2015, 7, 8584-8592.
The microporosity, structure and permeability of SiOx thin films deposited by microwave plasma-enhanced chemical vapour deposition (PE-CVD) atomic layer (PE-ALD) on polydimethylsiloxane (PDMS) substrates were investigated positron annihilation spectroscopy complementary technique, such as X-ray photoelectron spectroscopy, infrared time flight mass force microscopy. onto spin-coated PDMS substra...
Aluminum nitride (AlN) thin films were deposited on Si (100) substrates by using plasma-enhanced atomic layer deposition method (PEALD). Optimal PEALD parameters for AlN deposition were investigated. Under saturated deposition conditions, the clearly resolved fringes are observed from X-ray reflectivity (XRR) measurements, showing the perfectly smooth interface between the AlN film and Si (100)...
In this paper, polyethyleneterephthalate (PET) films with and without plasma pretreatment were modified by atomic layer deposition (ALD) and plasma-assisted atomic layer deposition (PA-ALD). It demonstrates that the Al2O3 films are successfully deposited onto the surface of PET films. The cracks formed on the deposited Al2O3 films in the ALD, plasma pretreated ALD, and PA-ALD were attributed to...
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