Optical and structural characterizations were conducted on an InGaAsN quantum well (QW) with large energy bandgap barrier material consisting of InGaAsP (Eg 1⁄4 1:62 eV) grown by metalorganic chemical vapor deposition. A growth pause annealing technique substantially improves both the structural and the optical quality of the QW. With an optimum growth pause of 14 s, surface roughness reduces b...

The dehydrogenation of intrinsic hydrogenated amorphous silicon (a-Si:H) at temperatures above approximately 300 °C degrades its ability to passivate silicon wafer surfaces. This limits the temperature of post-passivation processing steps during the fabrication of advanced silicon heterojunction or silicon-based tandem solar cells. We demonstrate that a hydrogen plasma can rehydrogenate intrins...

La2O3 films were grown on Si substrates by atomic layer deposition technique with different thickness. Crystallization characteristics of the La2O3 films were analyzed by grazing incidence X-ray diffraction after post-deposition rapid thermal annealing treatments at several annealing temperatures. It was found that the crystallization behaviors of the La2O3 films are affected by the film thickn...

This paper addresses the annealing temperature effect on nanostructure and phase transition of copper oxide thin films, deposited by PVD method on glass substrate (at 110 nm thickness) and post annealed at different temperatures (200-400°C) with a flow of 1 cm3s-1 Oxygen. The X-ray diffraction (XRD) was employed for crystallographic and phase analyses, while atomic force m...

Syntectonic microstructural evolution is a well-known phenomenon in the mantle and lower crust associated with two main processes: grain size reduction through dynamic recrystallization development of crystallographic preferred orientation (CPO). However, effects annealing via static on CPO have been largely overlooked. We investigated by analyzing suite kimberlite-hosted garnet peridotite xeno...

molybdenum thin films with 50 and 150 nm thicknesses were deposited on silicon substrates, using dc magnetron sputtering system, then post-annealed at different temperatures (200, 325, 450, 575 and 700°c) with flow oxygen at 200 sccm (standard cubic centimeter per minute). the crystallographic structure of the films was obtained by means of x-ray diffraction (xrd) analysis. an atomic force micr...

The thermal treatment of electromechanically active thick films prepared by aerosol deposition (AD) is a common practice to improve their electrical and electromechanical properties. We report on how post-deposition annealing in air affects the unique cross-sectional microstructure mechanical properties 0.9Pb(Mg1/3Nb2/3)O3−0.1PbTiO3 AD. Transmission electron microscopy revealed minor but detect...