The present status of our studies on the observation of thickness oscillations of the thermoelectric and galvanomagnetic properties in IV-VI quantum wells (QWs) is reviewed. These oscillations are attributed to the quantum size effects (QSEs) due to electron or hole confinement in the QWs. The experimental values of the oscillation period are in good agreement with the results of the theoretica...

We describe photonic crystal microcavities with very strong light-matter interaction to realize roomtemperature, equilibrium, exciton-polariton Bose-Einstein condensation (BEC). This goal is achieved through a careful balance between strong light trapping in a photonic band gap (PBG) and large exciton density enabled by a multiple quantum-well (QW) structure with a moderate dielectric constant....

The family of nitride semiconductors has had a profound influence on the development of optoelectronics for a large variety of applications. However, as of yet there are no native substrates commercially available that are grown by liquid phase methods as with Si and GaAs. As a result, the majority of electronic and optoelectronic devices are grown heteroepitaxially on sapphire and SiC. This Ph...

Traveling along the [001] direction of a zincblende binary compound one finds cation and anion atoms in alternate layers. In the case of Zn1-xCdxSe ternary alloys we will find Se layers alternating with Zn1-xCdx layers; the cation fcc sublattice consists of a random distribution of Cd an Zn atoms and most of the optical, structural and electronic properties are correctly described by the virtua...

Semiconductor quantum well (QW) light-emitting diodes (LEDs) have limited temporal modulation bandwidth of a few hundred MHz due to the long carrier recombination lifetime. Material doping and structure engineering typically leads to incremental change in the carrier recombination rate, whereas the plasmonic-based Purcell effect enables dramatic improvement for modulation frequency beyond the G...

In this study, photomodulated reflectance (PR) technique was employed on two different quantum well infrared photodetector (QWIP) structures, which consist of n-doped GaAs quantum wells (QWs) between undoped AlxGa1-xAs barriers with three different x compositions. Therefore, the barrier profile is in the form of a staircase-like barrier. The main difference between the two structures is the dop...

In this work, an integrated single chip dual cavity VCSEL has been designed which comprises an electrically pumped 980 nm bottom VCSEL section fabricated using GaInAs/AlGaAs MQW active region and a 1550 nm top VCSEL section constructed using GaInAs/AlGaInAs MQW active region but optically pumped using half of the produced 980 nm light entering into it from the electrically pumped bottom cavity....

Spin photocurrents generated by homogeneous optical excitation with circularly polarized radiation in quantum wells (QWs) are reviewed. The absorption of circularly polarized light results in optical spin orientation due to the transfer of the angular momentum of photons to electrons of a two-dimensional electron gas (2DEG). It is shown that in quantum wells belonging to one of the gyrotropic c...