La2O3 films were grown on Si substrates by atomic layer deposition technique with different thickness. Crystallization characteristics of the La2O3 films were analyzed by grazing incidence X-ray diffraction after post-deposition rapid thermal annealing treatments at several annealing temperatures. It was found that the crystallization behaviors of the La2O3 films are affected by the film thickn...

It has been shown that gallium antimonide (GaSb)-based dilute-nitrides display improved photoluminescence (PL) with in situ annealing in the molecular beam epitaxy (MBE) growth chamber under a Sb ambient. This improvement in luminescence efficiency translates into improved performance of optoelectronic devices, such as lasers, where this will lead to a reduction in threshold current densities. ...

We present a novel approach to enhance light emission in Si and demonstrate a sub-bandgap light emitting diode based on the introduction of point defects that enhance the radiative recombination rate. Ion implantation, pulsed laser melting and rapid thermal annealing were used to create a diode containing a self-interstitial-rich optically active region from which the zero-phonon emission line ...

Highly luminescent GaAs 1~x N x alloys were successfully grown by atmospheric pressure metalorganic vapor-phase epitaxy (MOVPE). The nitrogen composition x of as high as 5.6% was obtained using trimethylgallium (TMGa), tertiarybutylarsine (TBAs) and dimethylhydrazine (DMHy) precursors. In-situ and post-growth rapid thermal annealing was performed to enhance the optical quality of the material. ...

We report on the microstructures and properties of Ti6Al4V alloys, which were achieved upon quenching in sea water medium with potential high cooling rate. The alloys quenched at 1000 1100 °C, respectively. Moreover, effect post-quenching annealing performed 900 °C was analyzed. As a result, alloy experienced surface thermal stress, due to rapid shock, exposure temperature annealing. developed ...

We report the design and testing of an instrument implementing thermal multiplexing for rapid microfluidic amplification of multiple DNA targets with different optimal annealing temperatures. Through spatial modulation of an infrared laser, distinct temperature profiles can be generated simultaneously in an array of microfluidic reaction chambers in a polymer device. For our dual-chamber system...

We investigate a new method (QTA-PIMC) for global optimization on complex potential energy surfaces which combines the path integral Monte Carlo method with quantum and thermal annealing. This method is applied to the BLN protein model (Honeycutt, J. D.; Thirumalai, D. Biopolymers 1992, 32, 695). We show that this new approach outperforms simulated (thermal) annealing (SA) and that in fact SA i...

Titanium oxide coatings have been deposited by the sol-gel dip-coating method. Crystallization of titanium oxide coatings was then achieved through thermal annealing at temperatures above 400 °C. The structural properties and surface morphology of the crystallized coatings were studied by micro-Raman spectroscopy and atomic force microscopy, respectively. Characterization technique, based on le...

Nickel is an excellent ohmic-contact metal on 4H-SiC. This paper discusses the formation mechanism of nickel ohmic contact 4H-SiC by assessing electrical properties and microstructural change. Under high-temperature annealing, phase nickel-silicon compound can be observed with X-ray diffraction, resistance also changes. A comparative experiment was designed to use diffraction energy-dispersive ...