Thermal rectification is a phenomenon in which transport is preferred in one direction over the opposite. Though observations of thermal rectification have been elusive, it could be useful in many applications such as thermal management of electronics and improvement of thermoelectric devices. The current work explores the possibility of thermally rectifying devices with the use of nanostructur...

We present photosensitivity in large area physical vapour deposited mono and bi-layer MoS2 films. Photo-voltaic effect was observed in single layer MoS2 without any apparent rectifying junctions, making device fabrication straightforward. For bi-layers, no such effect was present, suggesting strong size effect in light-matter interaction. The photo-voltaic effect was observed to highly directio...

Hysteretic behavior is found experimentally in the transmembrane potential at low extracellular potassium in mouse lumbrical muscle cells. Adding isoprenaline to the external medium eliminates the bistable, hysteretic region. The system can be modeled mathematically and understood analytically with and without isoprenaline. Inward rectifying potassium channels appear to be essential for the bis...

We reported that the resistive switching of Ag/In-Ga-Zn-O/Pt cells exhibited self-rectifying performance at low-resistance state (LRS). The self-rectifying behavior with reliability was dynamic at elevated temperature from 303 to 393 K. The Schottky barrier originated from the interface between Ag electrode and In-Ga-Zn-O films, identified by replacing Ag electrode with Cu and Ti metals. The re...

The immense increase of unstructured data require novel computing systems that can process the input with low power and parallel processing. This functionality is similar to human brains are composed numerous neurons, synapses, their complex connections. To mimic brain an electronic device, resistive switching device crossbar array has attracted considerable attention for artificial synaptic de...

In this article, the authors show that geometric asymmetry in the layout of tunnel diodes yields asymmetry in the current-voltage I-V relationships associated with these diodes. Asymmetry improves diode performance. This effect is demonstrated for polysilicon–SiO2–Ti /Au and for Ni–NiO–Ni tunneling structures. For a polysilicon–SiO2–Ti /Au asymmetric tunneling diode ATD , sensitivity and I-V cu...