This article reports a novel ferroelectric field-effect transistor (FeFET)-based crossbar array cascaded with an external resistor. The resistor is shunted the column of FeFET array, as current limiter and reduces impact variations in drain ( ${I}_{d}$ </tex-math...

We propose a novel photon number resolving detector structure with large dynamic range. It consists of the series connection of N superconducting nanowires, each connected in parallel to an integrated resistor. Photon absorption in a wire switches its current to the parallel resistor producing a voltage pulse and the sum of these voltages is measured at the output. The combination of this struc...

1. First, wire up the circuit as shown in the diagram above, with the resistor, inductor, and capacitor connected in series to one another and the signal generator. Use the output of the Science Workshop 750 as the signal generator. 2. Start with the following values for resistance, inductance, and capacitance: • R = 500 Ω; L = 100 mH = 0.1 H; C = 1 μF = 1 x 10 F 3. Throughout the experiment yo...

This paper proposes a Flash Analog to Digital Convsrter design based on the use of a Quantized Differential Comparator. The formulation explores the use of a systematically incorporated input offset voltage in a differential amplifier for quantizing the reference voltages necessary for Flash ADC architectures, thus eliminating the need for a passive resistor array for the purpose. This work is ...

Utilizing a formerly published cold resistor circuitry, secure key exchange system is conceived and explored. A circuit realization of the constructed simulated. Similar to Pao-Lo exchanger, this in steady-state limit but crackable transient situations.

In this paper, the single event effect of N-well resistor is simulated by using technology computer aided design (TCAD) software. The results indicate that a heavy ion incident into will make disturbance in output current device. working mechanism and physical introduced are studied. show ion-induced electron-hole pairs neutralize depletion region substance provides high impedance for device, r...