Whisker contacted GaAs Schottky barrier diodes are the standard devices for mixing and multiplier applications in the THz frequency range. With the decreasing size of Schottky diodes for operation at higher frequencies, the reliability and the physical understanding of the Schottky barrier becomes increasingly important. In this contribution, we present new results concerning the reliability of...

DOI: 10.1002/aenm.201601863 level of recombination suppression at the rear surface. When Al is directly deposited on n-type c-Si, however, and even if it is not alloyed with the silicon, the contact behaves in a rectifying fashion and is associated with a high contact resistance, despite the small difference (≈0.1–0.2 eV) that exists between the Al work function and the electron affinity of sil...

In this work, the transport properties of metal/3C-SiC interfaces were monitored employing a nanoscale characterization approach in combination with conventional electrical measurements. In particular, using conductive atomic force microscopy allowed demonstrating that the stacking fault is the most pervasive, electrically active extended defect at 3C-SiC(111) surfaces, and it can be electrical...

Photocapacitance transient technique has been applied to Schottky semitransparent barriers as an alternative method, instead of the classical capacitance voltage transient method in p+-n junctions for detecting minority carrier traps. In such a way and, under certain conditions, it is possible to detect and measure both majority and minority traps in Schottky barriers. The method applies well t...

Lowered-barrier-height silicide Schottky diodes are desirable for obtaining longer cutoff-wavelength Si-based infrared detectors. Silicide Schottky diodes have been fabricated by the reaction of evaporated Pt and Ir films on p-Si,-.Ge, alloys with a thin Si capping layer. The onset of metal-SiGe reactions was controlled by the deposited metal thickness. Internal photoemission measurements were ...

The possible origins of leaky characteristics of Schottky barrier on p-GaN have been investigated. The as-grown samples did not show any electrical activities using Hall measurements. Ni diodes made on as-activated samples, either at 950 C for 5 s or at 750 C for 5 min exhibited quasiohmic behavior. Upon sequential etching of the sample to remove a surface layer of 150 Å, 1200 Å, and 5000 Å fro...

Diamond, which has excellent physical properties, is attractive for use in industrial applications. Because diamond is rated the highest for hardness and heat conductivity among all known materials, it is widely used for products such as abrasive grains, cutting tools, and heatsinks. Diamond also exhibits excellent transparency even in the ultraviolet range and can be applied to optical tools. ...

This work studies the capacitive behavior of an intergranular double Schottky barrier, which describes nonlinear charge transport in polycrystalline semiconductors. It is found that: ~i! a widely applied version of the Mott–Schottky equation can be inadequate, and can lead to significant errors; ~ii! a property called strong barrier pinning ~SBP!, underlies most attempts to obtain physical para...