The improvement of the metal/InGaAs interface is essential for the future application of InGaAs metal source/drain Schottky-barrier metal-oxide-semiconductor field-effect-transistors. In this article, on In0.53Ga0.47As, the authors examine the recently proposed method of inserting an ultrathin insulator to modulate the effective Schottky-barrier height SBH at the metal/semiconductor interface. ...

Electrical Characteristics of Industry’s first commercially available 1200 V rated SiC Schottky rectifiers, specially designed for operation at ≥ 250 °C are presented. These high-temperature SiC rectifiers fabricated in 1, 5, and 20 A current ratings feature reverse leakage currents of < 3 mA/cm at 1200 V up to temperatures as high as 300 °C. GeneSiC’s 1200 V/20A High Temperature Schottky (desi...

Several arguments are given for the summability of the superstring perturbation series. Whereas the Schottky group coordinatization of moduli space may be used to provide refined estimates of large-order bosonic string amplitudes, the super-Schottky group variables define a measure for the supermoduli space integral which leads to upper bounds on superstring scattering amplitudes. The genus-dep...

The construction of analogues of the Cauchy kernel is crucial for the solution of Riemann–Hilbert problems on compact Riemann surfaces. A formula for the Cauchy kernel can be given as an infinite sum over the elements of a Schottky group, and this sum is often used for the explicit evaluation of the kernel. In this paper a new formula for a quasi-automorphic analogue of the Cauchy kernel in ter...

The electrical behaviour of Schottky barrier diodes realized on vertically standing individual GaN nanorods and array of nanorods is investigated. The Schottky diodes on individual nanorod show highest barrier height in comparison with large area diodes on nanorods array and epitaxial film which is in contrast with previously published work. The discrepancy between the electrical behaviour of n...

Resonant cavity enhanced (RCE) photodiodes (PD’s) are promising candidates for applications in optical communications and interconnects where high-speed high-efficiency photodetection is desirable. In RCE structures, the electrical properties of the photodetector remain mostly unchanged; however, the presence of the microcavity causes wavelength selectivity accompanied by a drastic increase of ...

The current-voltage characteristics for Au/n-Si Schottky diode are generated by simulation. The simulation performed using Newton-Raphson iteration method yields current-voltage characteristics over wide temperature range. The data is analyzed using TDE-mechanism to study the temperature dependence of barrier height and ideality factor. Results obtained from simulation studies show the barrier ...

Asymmetric electrical contact (gold and indium) was performed to the slime mold. Electrical characterization of such structure revealed rectifying behavior due to the Schottky effect and a hysteresis due to the electro-chemical activity within the slime mold. Physarum polycephalum belongs to the species of order Physarales, subclass Myxogastromycetidae, class Myxomycetes, and division Myxosteli...

We have designed, fabricated and tested resonant cavity enhanced visible-blind AlGaN-based Schottky photodiodes. The bottom mirror of the resonant cavity was formed with a 20 pair AlN/ Al0.2Ga0.8N Bragg mirror. The devices were fabricated using a microwave compatible fabrication process. Au and indium-tin-oxide (ITO) thin films were used for Schottky contact formation. ITO and Au-Schottky devic...

In view of the newly synthesized two-dimensional (2D) semiconductor material WSi&lt;sub&gt;2&lt;/sub&gt;N&lt;sub&gt;4&lt;/sub&gt; (WSN) and 2D metal MoSH (MSH), a metal-semiconductor MSH/WSN Schottky-junction is constructed in this work. practical applications contact, presence Schottky barrier degrades device performance severely. Therefore, it crucial to obtain smaller height or even an Ohmic...