In this work, the factors affecting breakdown voltage of Si-GaN monolithic heterogeneous integrated Casccode FET fabricated by transfer printing were investigated. These two are avalanche resistance Si device and thickness SiN electrical isolation layer. Two kinds structures, MOSFET laterally-diffused (LDMOSFET), designed to study effect devices on characteristics Cascode FET. The layer was ana...

Tower mounted amplifiers (TMA) serve to lower the system noise figure (NF) in cellular base-stations. For performance reasons, the TMA is located as near to the receiving aerial as practical and has to be connected to the rest of the radio at the tower’s base by a long run of coaxial cable. The parameters critical to TMA performance are low NF for reasons of optimizing coverage area, high gain ...

In this work, design of CMOS operational amplifiers (opamps) is discussed using a new technique of transistor sizing, called as Potential Distribution Method (PDM). PDM is a technique proposed to simplify analog design and is primarily based on voltage and current distribution at different nodes of a circuit. Apart from being technology independent, PDM is also free from complex mathematical ex...

T h e technique of mirror biasing i s introduced and applied to a very high gain two stage CMOS cascode op-amp, in order to desensitize i ts output voltage to bias variations. Various performance metrics like low frequency common mode and power supply rejection ratios, slew rate and the sensitivity of the systematic offset are substantially improved. The improved performance i s theoretically p...