نتایج جستجو برای: semiconducting germanium

تعداد نتایج: 12211  

2017
B. Rossé O. Stezowski

The EXOGAM clover detector consists of four high-purity germanium (HPGe) crystals in a common cryostat. Each individual crystal is electrically segmented into four regions. We propose a method based on a multidimensional fitting procedure to calibrate the energy from the segments. This method could be used for any kind of segmented germanium detector. Its application to the EXOGAM clover is dis...

2006
R. L. Peterson K. D. Hobart H. Yin F. J. Kub J. C. Sturm

Recently we have demonstrated a process for generating uniaxial tensile strain in silicon. In this work, we generate uniaxially strained silicon and anisotropically strained silicon germanium on insulator with strain in both 100 and 110 in-plane directions. The strain is uniform over fairly large areas, and relaxed silicon-germanium alloy buffers are not used. The magnitude of uniaxial strain g...

2010
T. Engert

Several encapsulated single Germanium detectors have been mounted in one unit and integrated in a cryostat, in order to build efficient spectrometers to detect γ radiation emitted by nuclei excited in nuclear reactions. This kind of crystal encapsulation offer advantages compared to standard set-up of HPGedetectors. The basic aim of the following work is to develop a new capsule technology, in ...

1999
Brent P. Nelson Yueqin Xu John D. Webb Alice Mason Robert C. Reedy Lynn M. Gedvilas William A. Lanford

We grow hydrogenated amorphous silicon-germanium alloys by the hot-wire chemical vapor deposition technique at deposition rates between 0.5 and 1.4 nanometers per second. We prepared a set of these alloys to determine the concentrations of the alloying elements as measured by various techniques. This set consists of samples throughout the range of germanium alloying from 0% (a-Si:H) to 100% (a-...

Journal: Journal of Nanoanalysis 2016
Iran Ahmadnezhad Mahyar Rezvani Maria Fotukian Masoud Darvish Ganji,

The present work was an attempt to evaluate the potentialities of using SWCNTs as nanovectors for drug delivery of anticancer drug Oxaliplatin. First-principles van der Waals density functional (vdW-DF) calculations are used to investigate the incorporation of oxaliplatin inside the typical semiconducting and metallic single wall carbon nanotubes with various diameters (SWCNTs). Adsorption ener...

Journal: :Bulletin of Materials Science 1980

Journal: :Journal of the American Chemical Society 2004
Lei An Qiang Fu Chenguang Lu Jie Liu

Semiconducting-only single-walled carbon nanotube (SWNT) network field effect transistors (FETs) have been fabricated by selectively reacting all the metallic SWNTs in the devices with diazonium reagents in a controlled manner. We have shown that the concentration of diazonium reagents used is crucial for selectively eliminating metallic SWNTs and keeping semiconducting ones intact. Excessive a...

2015
John Torin Huzil Evi Saliaj Marina V Ivanova Marjan Gharagozloo Maria Jimena Loureiro Constanze Lamprecht Andreas Korinek Ding Wen Chen Marianna Foldvari

BACKGROUND The potential use of carbon nanotubes (CNTs) in gene therapy as delivery systems for nucleic acids has been recently recognized. Here, we describe that metallic versus semiconducting single-wall CNTs can produce significant differences in transfection rate and cellular distribution of siRNA in murine PAM212 keratinocytes. RESULTS/METHODOLOGY The results of cell interaction studies,...

Journal: :British journal of industrial medicine 1964
J E CREMER W N ALDRIDGE

The toxicity of triethyland tri-n-butyl-germanium acetates has been studied after their administration to rats. Both compounds had a low toxicity. Triethylgermanium had less than one-tenth of the toxicity of triethyltin or triethyl-lead and, unlike them, it did not appear to have a predominant action on the central nervous system. In biochemical studies in vitro, tri-n-butylgermanium was found ...

2008
M. P. LEPSELTER A. T. FIORY N. M. RAVINDRA

Since the introduction of SiO2/Si devices in the 1960s, the only basic change in the design of a MOSFET has been in the gate length. The channel thickness has fundamentally remained unchanged, as the inversion layer in a silicon MOSFET is still about 10 nm thick. Bipolar transistor base widths have been of sub-micron dimensions all this time. It is time for a new property to be exploited in con...

نمودار تعداد نتایج جستجو در هر سال

با کلیک روی نمودار نتایج را به سال انتشار فیلتر کنید