نتایج جستجو برای: semiconductor doping
تعداد نتایج: 76507 فیلتر نتایج به سال:
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We compute approximations to the electronic states near the gap in a large and realistic model of a-Si. The spatial Ž . structure of the states are computed explicitly and discussed. The properties of the local to extended Anderson transition is described. A qualitative picture of the Anderson transition is described. Implications for conductivity and doping are briefly discussed. q 1998 Elsevi...
Investigations of the system Ba–In–Sn, with the objective to synthesize Ba8In16Sn30 clathrate using Sn and In flux reactions, yielded instead the known BaSn3 compound (P63/mmc; a = 7.228(2) Å, c = 5.469(3) Å) from Sn flux and its In-doped variant BaSn2.8In0.2(1) (a = 7.260(1) Å, c = 5.382(2) Å) from In flux. BaSn3–xInx is the first, and up until now, the only ternary phase containing these elem...
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We introduce the concept that there are two generic classes of Mott insu-lators in nature. They are distinguished by their responses to weak doping. Doped charges form cluster (i.e. distribute inhomogeneously) in type I Mott insulators while distribute homogeneously in type II Mott insulators. We present our opinion on the role inhomogeneity plays in the cuprates.
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