A KGd(WO₄)₂ Raman laser was pumped within the cavity of a cw diode-pumped InGaAs semiconductor disk laser (SDL). The Raman laser threshold was reached for 5.6 W of absorbed diode pump power, and output power up to 0.8 W at 1143 nm, with optical conversion efficiency of 7.5% with respect to the absorbed diode pump power, was demonstrated. Tuning the SDL resulted in tuning of the Raman laser outp...

We have investigated the application of an electronic feedback technique recently reported by Repasky et al. [Appl. Opt. 45, 9013 (2006)] to an injection-locked semiconductor diode laser. We find that without electronic feedback, the injection-locked slave laser will only follow the master for less than 1 GHz, but once the electronic feedback is applied, the slave laser is capable of following ...

The ability to send high-speed messages between integrated circuit devices requires both high-frequency receivers and transmitters. The vast majority of integrated circuits are made from silicon-based semiconductors. Suitable receivers of silicon integrated circuits can be constructed from either metal-semiconductor-metal photodiodesl or P-type, intrinsic, N-type (PIN) photodiodes. These receiv...

The nonlinear reflectivity of semiconductor saturable absorber mirrors is investigated with ultrafast time-resolved and time-averaged reflectivity measurements. The relative contributions of absorption bleaching and induced absorption are studied as a function of fluence and wavelength. The impact of induced absorption on the stability of continuous-wave mode-locking is considered theoretically...

Realization of smaller and faster coherent light sources is critically important for the emerging applications in nanophotonics and information technology. Semiconductor lasers are arguably the most suitable candidate for such purposes. However, the minimum size of conventional semiconductor lasers utilizing dielectric optical cavities for sustaining laser oscillation is ultimately governed by ...

Ultrahigh-speed tuning of an extended-cavity semiconductor laser is demonstrated. The laser resonator comprises a unidirectional fiber-optic ring, a semiconductor optical amplifier as the gain medium, and a novel scanning filter based on a polygonal scanner. Variable tuning rates up to 1150 nm/ms (15.7-kHz repetition frequency) are demonstrated over a 70-nm wavelength span centered at 1.32 micr...