During sputter deposition of metal layers bulges at sharp convex corners can arise and are observed after metalization of contact holes for semiconductor circuits. We present an explanation of this phenomenon by assuming that in process steps prior to the deposition a ledge is formed . This assumption together with the choice of an appropriate model for the distribution of the incident particle...

In this study, the mobility enhancement in an Amorphous Oxide Semiconductor Thin Film Transistor (AOS TFT), particularly the effect of enhanced-mobility current path was investigated. In the TFT structure, the a-IGZO single active channel layer was replaced by double layers. Indium Tin Oxide (ITO) was employed as an enhanced-mobility current path material and was embedded in an amorphous Indium...

CMOS poly-Si thin-film transistors (TFTs) were fabricated through crystallization and GILD processes by a novel selected area laser assisted (SALA) system. The system enables a local area irradiation of small beams of a pulsed solid-state laser of frequency tripled Nd:YAG. The novel TFT process eliminated 3 doping mask steps of the conventional process. On-off current ratios for both types of p...

We propose a temperature sensor employing a ring oscillator composed of poly-Si thin-film transistors (TFTs). Particularly in this research, we compare temperature sensors using TFTs with lightlydoped drain structure (LDD TFTs) and TFTs with offset drain structure (offset TFTs). First, temperature dependences of transistor characteristics are compared between the LDD and offset TFTs. It is conf...

Hydrogenated polymorphous Silicon allows to fabricate TFTs with very interesting characteristics including better threshold voltage stability than a-Si TFTs, lower leakage current than μc-Si:H TFTs and excellent uniformity. Investigation of threshold voltage shift mechanisms of pm-Si:H TFTs has shown a specific semiconductor material degradation with different activation energies compared to a-...

Charge transport in organic devices depends strongly on the molecular order and morphology of the organic semiconductor thin films. In the design of new organic semiconductors, the selection of the appropriate core plays a key role in the molecular packing and charge transport characteristics of the organic device. Four derivatives of carbazole that mainly differ in the extension of the π-conju...

TIPS-Pentacene, an organic semiconductor characterized by its good electronic properties, solubility, and stability, is used primarily in organic thin-film transistors (OTFT). This research seeks to create an OTFT by crafting a stencil, depositing the source and drain onto a substrate’s surface, and processing TIPS-Pentacene onto the channel between them. In addition, if time permits, the elect...

Article history: Received 21 May 2017 Received in revised form 19 July 2017 Accepted 26 July 2017 Available online 7 August 2017 For the next generation display, foldable display is one of the attractive candidates. However, the degradation effects due to themechanical stress on the device are unavoidable. A strain due to themechanical stress generates cracks on the thin film transistors (TFTs)...

Rubbing is applied on thiophene-based organic semiconductor crystalline thin films to induce a reversible mechanical amorphisation. causes fluorescence switching regulated by the polymorphic nature of film. The process thermal annealing.

The advantages of integrating semiconductor devices at more than one level (‘3D integration’) are now recognized. Key to achieving monolithic 3DICs is the ability to form single crystal semiconductor islands at the upper level without unduly heating the lower level structures. In prior work a surface relief grating of 3.8 lm pitch in the substrate was used to mediate single crystal formation wh...