Linearization and planarization of the circuit models is pivotal to the submicron technologies. On the other hand, the characteristics of the VLSI circuits can be sometimes improved by using the multivalued components. It was shown that any `-level circuit based on the multivalued components is representable as an algebraic model based on ` linear arithmetic polynomials mapped correspondingly i...

In this work, we assess the performance of a ring oscillator and a DRAM cell when they are implemented with different technologies (planar CMOS, FinFET and III-V MOSFETs), and subjected to different reliability scenarios (variability and soft errors). FinFET-based circuits show the highest robustness against variability and soft error environments.

The rapidly growing optical communication market requires photonic components with ever-increasing functionality and complexity that can be fabricated reliably at low cost. Of the various approaches used to fabricate photonic components, those based on planar waveguides have achieved high performance and represent a promising path toward compact integration of optical functions. We present an o...

Abstrac t . It is known that a language is context-free iff it is the set of borders of the trees of recognizable set, where the border of a (labelled) tree is the word consisting of its leaf labels read from left to right. We give a generalization of this result in terms of planar graphs of bounded tree-width. Here the border of a planar graph is the word of edge labels of a path which borders...

Rapid passive device modeling is discussed in this work based on test structures fabricated in a 65 nm CMOS process with M1–M9 copper metal layers and one aluminum metal layer AP. Capacitance extraction for overlapping microstrips and shielded microstrip structures is investigated. Individual capacitances are modeled in terms of area and fringe components, either between microstrips or between ...

In this paper, we discuss the process, layout and device technologies of FinFET to obtain high RF and analog/mixed-signal performance circuits. The fin patterning due to Side-wall transfer (SWT) technique is useful to not only fabricate narrow fin line but also suppress the fin width variation comparing with ArF and EB lithography. The H2 annealing after Si etching is useful for not only to imp...

In this paper, we look at different possibilities and advantages of our early proposed hybrid planar and nonradiative dielectric (NRD) guide technology in the design of various millimeter-wave circuits. First of all, an overview of the NRD guide technology progress is presented. It indicates that the hybrid planar/NRD-guide (HP/NRDG) technology provides a straightforward assembly of MMIC circui...

In this paper, we describe the circuit polytope on series-parallel graphs. We first show the existence of a compact extended formulation. Though not being explicit, its construction process helps us to inductively provide the description in the original space. As a consequence, using the link between bonds and circuits in planar graphs, we also describe the bond polytope on series-parallel graphs.

introduction the use of cut-outs in electron applicators make changes on output, isodose, and percentage depth dose (pdd) curves. these changes and electron beam dose distribution in the form of three-dimensional (3d) can be measured by gel dosimeters. materials and methods dosimetry was performed with and without a square shield (6×6 cm2 field). the energies were 4, 9, and 16 mev and phantom w...