fall in stimulant activity. \T7hile SI1 inliihits t l i c stiinulaiit response to serotonin 011 tlic iso1:tted rat fundus strip, the 2-aminopropyl cwiipountl SI I 1 produced powerful contractions of t,lic same tissue. ‘l’lic piwetice of a 5-amino group arid the sidc cliairi i l l the %-position characterize the compounds of (Group I ) L\ Iiicli diow very w a k antagonism towards serotonin, liib...

Metal-oxide-semiconductor capacitors were fabricated on type-II staggered gap strained-Si/strained-Ge heterostructures epitaxially grown on relaxed SiGe substrates of various Ge fractions. Quasistatic quantummechanical capacitance-voltage (CV) simulations were fit to experimental CV measurements to extract the band alignment of the strained layers. The valence-band offset of the strained-Si/str...

The reduction of the contact resistance RC is one of the most challenging issues related to the miniaturisation of advanced MOSFET architectures, including FDSOI technology (Fully Depleted Silicon-OnInsulator). RC strongly depends on the active dopant concentration at the semiconductor/salicide interface. It is therefore essential that electrical activation at different depths within a doped la...

A process for the growth of uniform boron-doped Si/SiGe multiple quantum wells by rapid thermal chemical vapor deposition (RTCVD) for studying intersubband transitions for quantum cascade laser applications has been developed. The doping density profiles are extremely sharp (~2 nm/decade and ~3 nm/decade for the leading and trailing boron edges, respectively) measured by high resolution seconda...

r omovals hlave been rel)o ted. This report adds two al(litional (ases, both With unu11sualal featullres'. In the first (ase thel)atielit underwent successful removal of a inylxoina by a closed method following accidental (lislodcgmenit of the tumnor dlurinig exp)loratioli of the mitral valvc. This is the second reported com)lete removal of si1('h a tumor without the aid of extracorporeal circu...

The present paper is devoted to the comparison of determination methods optical pseudogap values Ag7(Si1-xGex)S5I (x = 0, 0.2, 0.4, 0.6, 0.8, 1.0) solid solutions by means two spectroscopy techniques: absorption and diffuse reflection. Optical was performed on thin single crystalline plane-parallel samples. Diffuse reflectance spectra were obtained samples in form microcrystalline powders (~ 10...

Measurements of the dark conductivity and thermoelectric power in hydrogenated amorphous silicon–germanium alloys (a-Si1-xGex:H) reveal that charge transport is not well described by an Arrhenius expression. For with concentrations Ge below 20%, anomalous hopping observed a power-law exponent 3/4, while temperature dependence higher best fit combination dependence. The latter has been attribute...

r omovals hlave been rel)o ted. This report adds two al(litional (ases, both With unu11sualal featullres'. In the first (ase thel)atielit underwent successful removal of a inylxoina by a closed method following accidental (lislodcgmenit of the tumnor dlurinig exp)loratioli of the mitral valvc. This is the second reported com)lete removal of si1('h a tumor without the aid of extracorporeal circu...

In contrast to the numerous reports on narrow-bandgap heterojunctions on silicon, such as strained Si1 xGex on silicon, there have been very few accounts of wide-bandgap semiconducting heterojunctions on silicon. Here, we present a wide-bandgap heterojunction—between titanium oxide and crystalline silicon—where the titanium oxide is deposited via a metal-organic chemical vapor deposition proces...