We have investigated the crystal structure, surface morphology, and electrical conductance of Cu films grown on H-terminated Si~100!. The films were grown by thermal evaporation at 10 Torr, at deposition rates from 0.1 to 3.5 nm/s and at substrate temperatures from room temperature up to 200 °C. Typical film thicknesses were ;100 nm. Epitaxial growth was verified by x-ray diffraction for films ...

Self-assembled nanowires offer the prospect of accurate and scalable device engineering at an atomistic scale for applications in electronics, photonics and biology. However, deterministic nanowire growth and the control of dopant profiles and heterostructures are limited by an incomplete understanding of the role of commonly used catalysts and specifically of their interface dynamics. Although...

The energy-loss spectrum associated with scattering of 100 keV H+ ions from Y atoms on Si 111 has been investigated both experimentally and theoretically. Measurements were made from Y overlayers, and from the Si 111 1 1 two-dimensional silicide phase formed by Y on this surface, in various scattering geometries and with different surface preparations. Theoretical simulations were conducted bas...

Planar and nanowire (NW) tunneling field effect transistors (TFETs) have been fabricated on ultra thin strained and unstrained SOI with shallow doped Nickel disilicide (NiSi2) source and drain (S/D) contacts. We developed a novel, self-aligned process to form the p-i-n TFETs which greatly easies their fabrication by tilted dopant implantation using the high-k/metal gate as a shadow mask and dop...

High resolution transmission electron microscopy (HRTEM) and Rutherford backscattering spectrometry (RBS) are used to study the ion induced effects in Au, Ag nanostructures grown on Si and thermally grown SiO2 substrates. Au and Ag films (∼ 2 nm) are prepared by thermal evaporation under high vacuum condition at room temperature (RT). These films were irradiated with MeV Au ions also at RT. Ver...

In this study, MHz pulse repetition rate femtosecond laser-irradiated gold-coated silicon surfaces under ambient condition were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction analysis (XRD), and X-ray photoelectron spectroscopy (XPS). The radiation fluence used was 0.5 J/cm2 at a pulse repetition rate of 25 MHz with 1 ms interactio...

A full-band Monte Carlo device simulator has been used to analyze the performance of sub-0.1 m Schottky barrier MOSFET’s. In these devices, the source and drain contacts are realized with metal silicide, and the injection of carriers is controlled by gate voltage modulation of tunneling through the source barrier. A simple model treating the silicide regions as metals, coupled with an Airy func...