A novel bipolar transistor structure, namely, SiGe base lateral PNM Schottky Collector Bipolar Transistor (SCBT) in Silicon-On-Insulator (SOI) substrate is explored using two-dimensional (2-D) simulation. Based on a comparison with its equivalent PNP HBT, we demonstrate for the first time that the proposed SiGe base lateral PNM transistor exhibits a superior performance in terms of high current...

The Discrete Cosine Transform (DCT) and Discrete Sine Transform (DST) have found applications in digital signal, image and video processing and particularly in transform coding systems for data compression and decompression. Multimode interference (MMI) in optical silicon on insulator (SOI) waveguides is attractive for realizing all-optical DCT and DST transforms as they have the advantages of ...

Starting with a brief review on 0.1m (100 nm) CMOS status, this paper addresses the key challenges in further scaling of CMOS technology into the nanometer (sub-100 nm) regime in light of fundamental physical effects and practical considerations. Among the issues discussed are: lithography, power supply and threshold voltage, short-channel effect, gate oxide, high-field effects, dopant number f...

The paper first describes the basic radiation-induced mechanisms such as transient effects, ionization phenomena and displacement damage. Subsequently, the impact of irradiation on advanced CMOS technology nodes is demonstrated in order to illustrate the underlying physical phenomena. Both bulk and silicon-on-insulator (SOI) technologies will be addressed. A third section discusses the present ...

Silicon germanium (SiGe) heterojunction transistors have been fabricated on bonded wafer, silicon-on-insulator (SOI) substrates. The devices have application in low power, radio-frequency electronics. The bonded wafer substrates incorporate poly-Si filled, deep trenches for isolation. A novel selective and non-selective low pressure chemical vapour deposition (LPCVD) growth process was used for...

We experimentally demonstrate a high resolution integrated spectrometer on silicon on insulator (SOI) substrate using a large-scale array of microdonut resonators. Through top-view imaging and processing, the measured spectral response of the spectrometer shows a linewidth of ~0.6 nm with an operating bandwidth of ~50 nm. This high resolution and bandwidth is achieved in a compact size using mi...

We propose and experimentally demonstrate a temporal differentiator in optical field based on a silicon microring resonator with a radius of 40 microm. The microring resonator operates near the critical coupling region, and can take the first order derivative of the optical field. It features compact size thus is suitable for integration with silicon-on-insulator (SOI) based optical and electro...

In this paper, an ultracompact design of a polarization rotator (PR) based on a silicon-on-insulator (SOI) platform is presented. The design contains two simple silicon nanowires but with unequal width, which will be easier to fabricate. It is shown here that a low-loss, wide-bandwidth, and 52.8-μm-long compact PR with polarization cross talk of -20  dB can be achieved. A full-vectorial finite ...

Smart chemical sensor based on CMOS(complementary metal-oxide-semiconductor) compatible SOI(silicon on insulator) microheater platform was realized by facilitating ZnO nanowires growth on the small membrane at the relatively low temperature. Our SOI microheater platform can be operated at the very low power consumption with novel metal oxide sensing materials, like ZnO or SnO2 nanostructured ma...

This work examines the consequence of γ radioactivity on SOI-based Tunnel Field Effect Transistors & their use as radiation dosimeters. Extensive simulations have been carried out throughout study in order to examine creation e--h+ pairs oxide field predict device’s features from region where transistor operation around pinch-off voltage significant agglomeration area. It was found that pre...