We use metal-assisted chemical etching (MCE) method to fabricate nanostructured black silicon on the surface of C-Si. The Si-PIN photoelectronic detector based on this type of black silicon shows excellent device performance with a responsivity of 0.57 A/W at 1060 nm. Silicon nanocone arrays can be created using MCE treatment. These modified surfaces show higher light absorptance in the near-in...

In the present work, thermochemical water splitting with siliconized silicon carbide (SiSiC) honeycombs coated with a zinc ferrite redox material was investigated. The small scale coated monoliths were tested in a laboratory test-rig and characterized by X-ray diffractometry (XRD) and Scanning Electron Microscopy (SEM) with corresponding micro analysis after testing in order to characterize the...

This study presents experimental results on Photovoltaic-thermal (PVT) solar systems, the commercial photovoltaic (PV) panels used as solar absorbers in PVT collectors, which are amorphous and multi-crystalline silicon. Testing was done with outdoor experiments in the climate of Bangkok corresponding to energy consumption behavior of medium size Thai families. The experimental results show that...

Silicon has many advantages over other semiconductor materials: low cost, nontoxicity, practically unlimited availability, and decades of experience in purification, growth and device fabrication. It is used for almost all modern electronic devices. However, the indirect energy gap in bulk crystalline Si makes it unable to emit light efficiently and thus unsuitable for optoelectronic applicatio...

Ultra small silicon nanoparticles (Si-NPs) with narrow size distribution are prepared in a one step process by UV picosecond laser ablation of silicon bulk in liquid. Characterization by electron microscopy and absorption spectroscopy proves Si-NPs generation with an average size of 2 nm resulting from an in situ photofragmentation effect. In this context, the current work aims to explore the l...

Ultra-fine silicon quantum wires with SiO 2 boundaries were successfully fabricated by combining SiGe/Si heteroepitaxy, selective chemical etching and subsequent thermal oxidation. The results are observed by scanning electron microscopy. The present method provides a very controllable way to fabricate ultra-fine silicon quantum wires, which is fully compatible with silicon microelectronic tech...

Semi-Insulating Polycrystalline Silicon (SIPOS) films were deposited on Si02/Si, Si, and sapphire substrates by the chemical vapor deposition of silane and nitroiJs oxide at atmospheric and low pressures. X-ray diffraction was used to identify the phases present, and to study structural properties like grain size and strain as a function of the flow rate ratio, ~, = [N20]/[SiH4].oBoth APCVD and...

As an important step towards the realisation of silicon-based tandem solar cells using silicon quantum dots embedded in a silicon dioxide (SiO(2)) matrix, single-junction silicon quantum dot (Si QD) solar cells on quartz substrates have been fabricated. The total thickness of the solar cell material is 420 nm. The cells contain 4 nm diameter Si quantum dots. The impacts of post-metallisation tr...

Amorphous silicon film (α-Si) doped with uniform erbium (Er) impurities is deposited by laser ablation technology. High density silicon nanocrystals (nc-Si) can be formed after the rapid thermal annealing (RTA) process. The crystalline process can be explained as the “metal-induced nanocrystalline mechanism”, i.e., doped erbium atoms introduce additional strain in the amorphous silicon matrix a...