نتایج جستجو برای: sns2

تعداد نتایج: 222  

Journal: :Nanoscale 2016
Rajesh Kumar Ulaganathan Yi-Ying Lu Chia-Jung Kuo Srinivasa Reddy Tamalampudi Raman Sankar Karunakara Moorthy Boopathi Ankur Anand Kanchan Yadav Roshan Jesus Mathew Chia-Rung Liu Fang Cheng Chou Yit-Tsong Chen

In this paper, we report the optoelectronic properties of multi-layered GeS nanosheet (∼28 nm thick)-based field-effect transistors (called GeS-FETs). The multi-layered GeS-FETs exhibit remarkably high photoresponsivity of Rλ ∼ 206 A W(-1) under 1.5 μW cm(-2) illumination at λ = 633 nm, Vg = 0 V, and Vds = 10 V. The obtained Rλ ∼ 206 A W(-1) is excellent as compared with a GeS nanoribbon-based ...

نمودار تعداد نتایج جستجو در هر سال

با کلیک روی نمودار نتایج را به سال انتشار فیلتر کنید