In the absent of magnetic field, we have observed the anisotropic spin polarization degree of photoconduction (SPD-PC) in (Ga,Mn)As/GaAs heterojunction. We think three kinds of mechanisms contribute to the magnetic related signal, (i) (Ga,Mn)As self-producing due to the valence band polarization, (ii) unequal intensity of left and right circularly polarized light reaching to GaAs layer to excit...

Along with its well known charge and mass, the electron also carries an intrinsic angular momentum, or spin. The rules of quantum mechanics allow us to measure only the probability that the electron spin is in one of two allowed spin states. When a beam carries a net excess of electrons in one of these two allowed spin states, the beam is said to be polarized. The beam polarization may be measu...

We investigate the band dispersion and the spin texture of topologically protected surface states in the bulk topological insulators Bi2Se3 and Bi2Te3 by first-principles methods. Strong spin-orbit entanglement in these materials reduces the spin polarization of the surface states to ∼50% in both cases; this reduction is absent in simple models but of important implications to essentially any s...

We report on first principles calculations of the anisotropy of the intrinsic spin Hall conductivity (SHC) in nonmagnetic hcp metals and in antiferromagnetic Cr. For most of the metals of this study we find large anisotropies. We derive the general relation between the SHC vector and the direction of spin polarization and discuss its consequences for hcp metals. Especially, it is predicted that...

The universality of single-spin asymmetry on inclusive π-meson production is discussed. This universality can be related to the hadron substructure— constituent quarks in the frame of the quark model for U-matrix. Polarization experiments give us an unique opportunity to probe the nucleon internal structure. While spin averaged cross-sections can be calculated within acceptable accuracy, curren...

The equations-of-motion for the density matrix are derived in a multiband model to describe the response of semiconductors (bulk or quantum well structures) under optical excitation with arbitrary polarization. The multiband model used, comprising the twofold conduction band and the fourfold topmost valence band (or heavy-and light-hole states), incorporates spin-splitting of the single-particl...

The design, operation and performance of quantum dot spin-polarized vertical cavity surface emitting lasers (VCSELs) and single-photon sources are described and discussed. The effects of spin-induced gain anisotropy on output polarization and threshold current reduction have been studied along with the high-frequency response in a spin-polarized VCSEL. While the output circular polarization in ...

We report electrical measurements of the current-induced spin polarization of the surface current in topological insulator devices where contributions from bulk and surface conduction can be disentangled by electrical gating. The devices use a ferromagnetic tunnel junction (permalloy/Al2O3) as a spin detector on a back-gated (Bi,Sb)2Te3 channel. We observe hysteretic voltage signals as the magn...

Gate control of dynamic nuclear polarization under optical orientation is demonstrated in a Schottky-gated n-GaAs/AlGaAs (110) quantum well by time-resolved Kerr rotation measurements. Spin relaxation of electrons due to mechanisms other than the hyperfine interaction is effectively suppressed as the donor induced background electron density is reduced from metallic to insulating regimes. Subse...