LSMO Low Resistance High resistance The Fig.4a shows the spin valve presented previously in Fig.1 before any higher voltage was applied this corresponds to the lowest resistance state and a SVMR of 22%. Next, we apply a voltage bias of -1.5 V and the device resistance increases from 362 kOhms to 4.3 MOhms. The voltage is subsequently reduced back to the measuring value of -0.1 V and the magneto...

We describe conventional and high-resolution transmission electron microscopy ~HRTEM! characterization of the microstructure of sputtered NiFe/Cu giant magnetoresistance spin valves ~Cu/FeMn/NiFe/Cu/NiFe! sandwiched between thick Nb contact layers. Six spin valves, sputtered at different temperatures, three with thin ~3 nm! and three with thick ~24 and 30 nm! NiFe layers, were studied. All of t...

Electric-field control of magnetism via an inverse magnetostrictive effect is alternative path toward improving energy-efficient storage and sensing devices based on a giant magnetoresistance effect. In this Letter, we report lateral electric-field driven strain-mediated modulation magnetotransport properties in Co/Cu/Py pseudo spin valve grown ferroelectric 0.7Pb[Mg 1/3 Nb 2/3 )]O 3 –0.3PbTiO ...

Recent experimental and theoretical studies on the magnetization dynamics driven by an electric current have uncovered a number of unprecedented rich dynamic phenomena. We predict an intrinsic chaotic dynamics that has not been previously anticipated. We explicitly show that the transition to chaotic dynamics occurs through a series of period doubling bifurcations. In chaotic regime, two dramat...