High-performance and low-temperature-compatible solid phase crystallized polycrystalline silicon thin film transistors using thermal oxide buffered aluminum oxide (Al2O3) as gate dielectric are demonstrated. By growing a thermal oxide buffer layer using two-step annealing method, the interface quality is greatly improved, resulting in excellent device performance.

We have experimentally determined the crystallization rate of plasma-produced amorphous silicon powder undergoing in-flight thermal annealing, and have found a significant reduction in the activation energy for crystallization compared to amorphous silicon thin films. This finding allows us to shed light onto the mechanism leading to the formation of high quality nanocrystals in non-thermal pla...

Several silicate materials were plasma sprayed and characterized by the authors in recent years from the point of view of their chemical and phase compositions, microstructure and mechanical as well as thermal properties. Present work is concerned with selected dielectric properties of these deposits. Synthetic mullite and steatite as well as natural olivine-forsterite were plasma sprayed using...

Strong suppression of the effects caused by the internal electric field in ZnO/ZnMgO quantum wells following ion-implantation and rapid thermal annealing, is revealed by photoluminescence, time-resolved photoluminescence, and band structure calculations. The implantation and annealing induces Zn/Mg intermixing, resulting in graded quantum well interfaces. This reduces the quantum-confined Stark...

Porous silicon has been prepared using a vapor-etching based technique on a commercial silicon powder. Strong visible emission was observed in all samples. Obtained silicon powder with a thin porous layer at the surface was subjected to a photo-thermal annealing at different temperatures under oxygen atmosphere followed by a chemical treatment. Inductively coupled plasma atomic emission spectro...

We present laboratory studies of the micro-structural evolution of an amorphous ferro-magnesian silicate, of olivine composition, following thermal annealing under vacuum. The amorphous silicate was prepared as a thin film on a diamond substrate. Annealing under vacuum was performed at temperatures ranging from 870 to 1020 K. After annealing the thin films were extracted from the substrate and ...

The samples of CR-39 polymer (TASTRAK, Bristol, England) were annealled thermally at various temperatures ranging from 100oC to 180oC for 1 hour, in air. FTIR spectroscopy reveals the structural degradation of CR-39 polymer due to thermal annealing above its glass transition temperature. Optical band gap of pristine and thermally annealed samples has been determined using UV-Visible absorption ...

The effects of thermal annealing on the emission and microstructural characteristics of GaAs0.88Sb0.10N0.02/InP multiple quantum well (QW) structures were studied by photoluminescence (PL) spectroscopy and transmission electron microscopy (TEM). The results show that the optimum annealing conditions lead to improved PL intensity accompanied by only a small blue shift, contrasting the behavior o...

TiO2 thin film was deposited on non-heated Si(1 0 0) substrate by RF magnetron sputtering. The as-deposited films were annealed by a conventional thermal annealing (CTA) and rapid thermal annealing (RTA) at 700 and 800 8C, and the effects of annealing temperature and method on optical properties of studied films were investigated by measuring the optical band gaps and FT-IR spectra. And we also...

Thin films of tin sulfide/cadmium sulfide (SnS/CdS) were prepared bythermal evaporation method at room temperature on a glass substrate and then annealedat different temperature with the aim of optimizing the optical properties of the materialfor use in photovoltaic solar cell devices. The effect of annealing on optical propertiesof SnS/CdS film was studied in the temper...