Rapid continuous thermal control of chemical reactions such as those for chemical vapor deposition (CVD) growth of nanotubes and nanowires cannot be studied using traditional reactors such as tube furnaces, which have large thermal masses. We present the design, modeling, and verification of a simple, low-cost reactor based on resistive heating of a suspended silicon platform. This system achie...

Reducing solar cell thickness is an attractive way to reduce material costs. However, model calculations in this paper show that if rear surface recombination velocity (S) is greater than about 1000 cm/s, a 100-μm-thick screen-printed cell on solar-grade material has a lower efficiency than a 300-μm-thick cell. The literature demonstrates that S < 1000 cm/s is readily achievable on monocrystall...

Articles you may be interested in High-quality 1.3 m-wavelength GaInAsN/GaAs quantum wells grown by metalorganic vapor phase epitaxy on vicinal substrates Appl. Relaxed, high-quality InP on GaAs by using InGaAs and InGaP graded buffers to avoid phase separation High-detectivity InAs quantum-dot infrared photodetectors grown on InP by metal–organic chemical–vapor deposition Appl. High detectivit...

Three new ruthenium amidinate complexes were prepared: tris(diisopropylacetamidinato)-ruthenium(III), Ru(iPrNC(Me)NiPr)3 4; bis(diisopropyl-acetamidinato)ruthenium(II) dicarbonyl, Ru( iPrNC(Me)NiPr)2(CO)2 5; and bis(ditert-butylacetamidinato)ruthenium(II) dicarbonyl, Ru(tBuNC(Me)NtBu)2(CO)2 6. They have been synthesized and characterized by H NMR, TG and X-ray structure analysis. These three co...

bamboo-structured carbon nanotubes are grown on co-mo/mcm-41 catalyst in the temperature range of 873-973 k by thermal chemical vapor deposition of acetylene. this study shows that the purified carbon nanotubes have open tips and the metals of the catalyst are not encapsulated. thus, the bamboo-structure seems to grow from the base. pore size distribution of the product is quite narrow and is i...

Stopping the plasma-enhanced chemical vapor deposition (PECVD) once and maintaining the film in a vacuum for 30 s were performed. This was done several times during the formation of a film of i-layer microcrystalline silicon (μc-Si:H) used in thin-film silicon tandem solar cells. This process aimed to reduce defect regions which occur due to collision with neighboring grains as the film becomes...

Plasma-assisted thermal chemical vapor deposition (CVD) was carried out to synthesize high-quality graphene film at a low temperature of 600°C. Monolayer graphene films were thus synthesized on Cu foil using various ratios of hydrogen and methane in a gaseous mixture. The in situ plasma emission spectrum was measured to elucidate the mechanism of graphene growth in a plasma-assisted thermal CVD...

The use of the Plasma Enhanced Chemical Vapor Deposition techniques have increased during the last decades. PECVD attractiveness, basically due to the lowering of the substrate temperatures, has enlarged its uses because it allows an action of ions or excited species. However, the choice of the reactors is not always easy. After presenting the main domains of applications of the PECVD technique...

The quenching of the photoluminescence of Si nanopowder grown by plasma-enhanced chemical vapor deposition due to pressure was measured for various gases ~ H2, O2, N2, He, Ne, Ar, and Kr! and at different temperatures. The characteristic pressure, P0, of the general dependence I(P) 5 I0 exp( 2 P/P0) is gas and temperature dependent. However, when the number of gas collisions is taken as the var...