We report the growth and characterization of Cu nanoparticles thin film of on glass substrate by pulse laser deposition method. The Cu thin film prepared with different energy 50, 60, 70, and 80 mJ. The energy effect on the morphological, structural and optical properties were studied by AFM, XRD and UV-Visible spectrophotometer. Surface topography studied by atomic force microscopy revealed na...

Diffractive structures such as pillar gratings are a promising way of coupling light into or out of thin semiconductor devices, for applications in thin film solar cells and light-emitting diodes. In this paper we show that the diffuse transmittance behavior of pillar gratings can be understood using the concept of grating mode interference and that the optimum heights of the grating and an est...

For ultrathin films of a given material, light absorption is proportional to the film thickness. However, if the optical constants of the film are chosen in an optimal way, light absorption can be high even for extremely thin films and optical path length. We derive the optimal conditions and show how the maximized absorptance depends on film thickness. It is then shown that the optimal situati...

High-quality thin films of conjugated molecules with smooth interfaces are important to assist the advent of organic electronics. Here, we report on the layer-by-layer growth of the organic semiconductor molecule p-sexiphenyl (6P) on the transparent electrode material graphene. Low energy electron microscopy and micro low energy electron diffraction reveal the morphological and structural evolu...

The scattering properties of transparent conductive oxide (TCO) films into dielectric and semiconductor surrounding media are modeled and compared to experiment. The new approach is not only valid for smooth optical films but also for films with enhanced roughness in order to generate light trapping structures for thin film solar cells. ©2010 Optical Society of America. OCIS codes: (310.0310) t...

Organic thin film transistor (OTFT) performance is highly materials interface-dependent, and dramatic performance enhancements can be achieved by properly modifying the semiconductor/gate dielectric interface. However, the origin of these effects is not well understood, as this is a classic "buried interface" problem that has traditionally been difficult to address. Here we address the question...

Solution-processed gate dielectrics were fabricated with the combined ZrO2 and Al2O3 (ZAO) in the form of mixed and stacked types for oxide thin film transistors (TFTs). ZAO thin films prepared with double coatings for solid gate dielectrics were characterized by analytical tools. For the first time, the capacitance of the oxide semiconductor was extracted from the capacitance-voltage propertie...

Effect of temperature and light was investigated on a thin film of organic semiconductor formyl-TIPPCu(II) deposited on a glass substrate with preliminary evaporated gold electrodes. The electrical capacitance and resistance of the fabricated device were evaluated under the effect of temperature and light. The relative capacitance of the fabricated sensor increased by 4.3 times by rising temper...