نتایج جستجو برای: thin film transistor

تعداد نتایج: 201767  

2007
M. - H. Kim G. Acbas M. - H. Yang I. Ohkubo H. Christen D. Mandrus M. A. Scarpulla O. D. Dubon Z. Schlesinger P. Khalifah J. Cerne

We present measurement and analysis techniques that allow the complex magneto-conductivity tensor to be determined from measurements of the complex Faraday (θF) and Kerr (θK) angles. θF and θK are measured in a Ga1−xMnxAs and SrRuO3 films. Thick film transmission and reflection equations are used to convert the complex θF and θK into the complex longitudinal conductivity σxx and the complex tra...

2011
V. Ryzhii M. Ryzhii A. Satou T. Otsuji V. Mitin

Related Articles Plasma treatments to improve metal contacts in graphene field effect transistor J. Appl. Phys. 110, 073305 (2011) Improved negative bias illumination instability of sol-gel gallium zinc tin oxide thin film transistors Appl. Phys. Lett. 99, 152102 (2011) Nonvolatile memory characteristics of organic thin film transistors using poly(2-hydroxyethyl methacrylate)-based polymer mult...

2012
Zin-Sig Kim Sang Chul Lim Seonghyun Kim Yongsuk Yang Do-Hoon Hwang

This report presents biotin-functionalized semiconducting polymers that are based on fluorene and bithiophene co-polymers (F8T2). Also presented is the application of these polymers to an organic thin film transistor used as a biosensor. The side chains of fluorene were partially biotinylated after the esterification of the biotin with corresponding alcohol-groups at the side chain in F8T2. The...

Journal: :Engineering Letters 2008
Chien-wen Shen

—Because most of the procedures in defect inspection process of TFT-LCD module assembly are examined manually through human vision, cycle time estimation for this particular process is complicated and usually deviated from actual observations considerably in practice. Hence, this study would like to apply the approaches of Bayesian network, linear discriminant analysis, and logistic regression ...

2017
Jyun-Yi Li Sheng-Po Chang Ming-Hung Hsu Shoou-Jinn Chang

We investigated the electrical and optoelectronic properties of a magnesium zinc oxide thin-film phototransistor. We fabricate an ultraviolet phototransistor by using a wide-bandgap MgZnO thin film as the active layer material of the thin film transistor (TFT). The fabricated device demonstrated a threshold voltage of 3.1 V, on-off current ratio of 10⁵, subthreshold swing of 0.8 V/decade, and m...

Journal: :IEEJ Transactions on Fundamentals and Materials 1990

Journal: :The Journal of The Institute of Image Information and Television Engineers 2010

2001
Carlos H Hidrovo Douglas P Hart

This paper presents a unique optical technique that utilizes the reabsorption and emission of two fluorescent dyes to accurately measure film thickness while minimizing errors caused by variations in illumination intensity and surface reflectivity. Combinations of dyes are selected that exhibit a high degree of emission reabsorption and each dye concentration is adjusted to create an optically ...

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