The scaling down of technology in CMOS circuits, results in the down scaling of threshold voltage thereby increasing the sub-threshold leakage current. LECTOR is a technique for designing CMOS circuits in order to reduce the leakage current without affecting the dynamic power dissipation, which made LECTOR a better technique in leakage power reduction when compared to all other existing leakage...

OBJECTIVE Chronic pain is a common complication after thoracic surgery. The most important factor appears to be intercostal nerve damage. The purpose of this prospective study was to objectively evaluate intercostal nerve damage associated with post-thoracotomy pain after three surgical procedures using current perception threshold testing. METHODS The 32 patients were classified into three g...

Objectives: Chronic pain is a common complication after thoracic surgery. The most important factor appears to be intercostal nerve damage. The purpose of this prospective study was to objectively evaluate intercostal nerve damage associated with post-thoracotomy pain after three surgical procedures using current perception threshold testing. Methods: The 32 patients were classified into three ...

football participation requires considerable utilization of both aerobic and anaerobic energy systems to match the high energetic demands of the sport. the consequent stresses imposed on the physiological and metabolic systems carries players to the threshold of exhaustion during match-play, from which they are required to recover in preparation for the subsequent game. a high number of players...

Multiple-threshold CMOS circuit, which has both high and low threshold transistors in a single chip, can be used to deal with the leakage problem in low voltage low power (LVLP) and high performance applications. The high threshold transistors can suppress the subthreshold leakage current, while the low threshold transistors are used to achieve the high performance. In this paper, we will intro...

We have studied the dependence on domain wall structure of the spin-transfer torque current density threshold for the onset of wall motion in curved, Gd-doped Ni80Fe20 nanowires with no artificial pinning potentials. For single vortex domain walls, both for 10% and 1% Gd doping concentrations, the threshold current density is inversely proportional to the wire width and significantly lower comp...

Leakage power is the main dominant source of power dissipation for Sub-lOOlJm VLSI circuits. Various techniques were proposed to reduce the leakage power dissipation; one of these techniques is Multi-Threshold voltage. In this paper, the exact and optimal values of Threshold Voltage (Vth) for each transistor of the design are found for any sequential circuit. This is achieved by applying Artifi...

A substantial reduction is reported in the threshold current densities for 1 5 p m wavelength In,Ga,+,As/ In,Ga, .,As, -”P, strained-layer multiple quantum well (SLMQW) lasers over lattice-matched MQW lasers. Threshold current density was found to depend sensitively on the InAs content x and thickness d of the In,Ga, -.As quantum wells. Threshold current densities as low as 370A/cm2 and interna...

The threshold current and the characteristic temperature of 1.3m InGaAsP–InP buried heterostructure (BH) lasers with the p-n-p-n blocking layers have been numerically analyzed using a two-dimensional (2-D) device simulator. The simulation model includes optical gain, intervalence absorption, radiative spontaneous-emission current, Auger recombination current, Shockley–Read–Hall recombination cu...