نتایج جستجو برای: transition metal dichalcogenide

تعداد نتایج: 436887  

Journal: :Advanced quantum technologies 2021

Even the best quality 2D materials have non-negligible concentrations of vacancies and impurities. It is critical to understand quantify how defects change intrinsic properties, use this knowledge generate functionality. This challenge can be addressed by employing many-body perturbation theory obtain optical absorption spectra defected transition metal dichalcogenides. Herein vacancies, which ...

Journal: :Physics Letters 2022

The possibility of the formation an electron-hole liquid in type II heterostructures based on monolayers (bilayers) transition metal dichalcogenides is considered. It indicated that additional valleys conduction band, which are present bilayers, required for its observation. binding energy interlayer exciton found by variation method. An analytical formula shape recombination line liquid.

2017
Morten N Gjerding Mohnish Pandey Kristian S Thygesen

Plasmonics currently faces the problem of seemingly inevitable optical losses occurring in the metallic components that challenges the implementation of essentially any application. In this work, we show that Ohmic losses are reduced in certain layered metals, such as the transition metal dichalcogenide TaS2, due to an extraordinarily small density of states for scattering in the near-IR origin...

Journal: :Nano letters 2013
Britton W H Baugher Hugh O H Churchill Yafang Yang Pablo Jarillo-Herrero

We report electronic transport measurements of devices based on monolayers and bilayers of the transition-metal dichalcogenide MoS2. Through a combination of in situ vacuum annealing and electrostatic gating we obtained ohmic contact to the MoS2 down to 4 K at high carrier densities. At lower carrier densities, low-temperature four probe transport measurements show a metal-insulator transition ...

2015
Sheng Yu Kwesi Eshun Hao Zhu Qiliang Li

Transition metal dichalcogenides (TMDCs), such as MoS2 and WSe2, provide two-dimensional atomic crystals with semiconductor band gap. In this work, we present a design of new mechano-electric generators and sensors based on transition metal dichalcogenide nanoribbon PN junctions and heterojunctions. The mechano-electric conversion was simulated by using a first-principle calculation. The output...

2015
Zhanxi Fan Xiao Huang Chaoliang Tan Hua Zhang

Two-dimensional nanomaterials, especially graphene and single- or few-layer transition metal dichalcogenide nanosheets, have attracted great research interest in recent years due to their distinctive physical, chemical and electronic properties as well as their great potentials for a broad range of applications. Recently, great efforts have also been devoted to the controlled synthesis of thin ...

2013
Hannu-Pekka Komsa Arkady V. Krasheninnikov

We calculate from first principles the electronic structure and optical properties of a number of transition metal dichalcogenide (TMD) bilayer heterostructures consisting of MoS2 layers sandwiched with WS2, MoSe2, MoTe2, BN, or graphene sheets. Contrary to previous works, the systems are constructed in such a way that the unstrained lattice constants of the constituent incommensurate monolayer...

Journal: :Physical review letters 2016
Xiaoxiang Xi Helmuth Berger László Forró Jie Shan Kin Fai Mak

Recent experimental advances in atomically thin transition metal dichalcogenide (TMD) metals have unveiled a range of interesting phenomena including the coexistence of charge-density-wave (CDW) order and superconductivity down to the monolayer limit. The atomic thickness of two-dimensional (2D) TMD metals also opens up the possibility for control of these electronic phase transitions by electr...

2015
Dehui Li Rui Cheng Hailong Zhou Chen Wang Anxiang Yin Yu Chen Nathan O Weiss Yu Huang Xiangfeng Duan

The layered transition metal dichalcogenides have attracted considerable interest for their unique electronic and optical properties. While the monolayer MoS2 exhibits a direct bandgap, the multilayer MoS2 is an indirect bandgap semiconductor and generally optically inactive. Here we report electric-field-induced strong electroluminescence in multilayer MoS2. We show that GaN-Al2O3-MoS2 and GaN...

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