In this work, the design and analysis of new Level Shifter with Gate Driver for Li-Ion battery charger is proposed for high speed and low area in 180nm CMOS technology. The new proposed level shifter is used to raise the voltage level and significantly reduces transfer delay 1.3ns (transfer delay of conventional level shifter) to 0.15ns with the same input signal. Also, the level shifter with g...

In this report, a parameter extraction procedure and a model presented in [4] are tested using a 280×0.25μm transistor manufactured in a 0.25 μmCMOS process. The extraction procedure is based on two sets of S-parameter measurements. The first transistor measurement is in the linear region, to obtain the extrinsic terminal resistances which are biasindependent . The intrinsic parameters of the t...

The extraordinary electronic properties of graphene provided the main thrusts for the rapid advance of graphene electronics. In photonics, the gate-controllable electronic properties of graphene provide a route to efficiently manipulate the interaction of photons with graphene, which has recently sparked keen interest in graphene plasmonics. However, the electro-optic tuning capability of unpat...

In the presence of shot noise the charge on a mesoscopic conductor fluctuates. We are interested in the charge fluctuations which arise if the conductor is in the proximity of a gate to which it is coupled by long range Coulomb forces only. Specifically we consider a gate coupled to the edge of a Hall bar subject to a quantizing magnetic field which contains a quantum point contact. The gate is...

Many applications such as Industrial Internet of Things (IIoT), tactile Internet, and 5G/6G mobile require Ultra-Low Latency (ULL) in data transmission. The end-to-end latency is required to be on the order sub-millisecond these applications. IEEE 802.1 Time Sensitive Networking (TSN) standards have been developed provide ULL networking. 802.1Qbv Time-Aware Shaper (TAS), which a typical flow co...

Transmission Electron Microscopy developed from an imaging tool into a quantitative electron beam characterization tool that locally accesses structure, chemistry, and bonding in materials with sub Angstrom resolution. Experiments utilize coherently and incoherently scattered electrons. In this contribution, the interface between gallium nitride and sapphire as well as thin silicon gate oxides ...

In this work, we demonstrated the logic gate design using pyrrole based single molecular field effect transistor (FET) for the first time. The semi empirical quantum transport method, which is applying non-equilibrium Green’s function (NEGF) in combination with self-consistent extended Huckel theory (SCEHT), has been adopted to study the charge transport characteristics of a modeled device. By ...

The observation of THz regime transmission resonances in an InGaAs/InP high electron mobility transistor (HEMT) can be attributed to excitation of plasmons in its two-dimensional electron gas (2DEG). Properties of grating-based, gatevoltage tunable resonances are shown to be adequately modeled using commercial finite element method (FEM) software when the HEMT layer structure, gate geometry and...

quantum-dot cellular automaton (qca) is a novel nanotechnology with a very different computational method in compared with cmos, whereas placement of electrons in cells indicates digital information. this nanotechnology with specifications such as fast speed, high parallel processing, small area, low power consumption and higher switching frequency becomes a promising candidate for cmos technol...

flow regime in dam's bottom outlet is divided in pressurized flow and free surface flow by the gate located for discharge control. down stream tunnel involves high velocity multi component air –water flow studied by mathematical model. in this research work, we used finite volume mixture two phase flow model. because of high reynolds number, standard two equations k-e turbulence model was ...