نتایج جستجو برای: tunnel diode amplifier
تعداد نتایج: 76561 فیلتر نتایج به سال:
We present the results of performance modeling of a diode-pumped solid-state HiLASE laser designed for use in inertial fusion energy power plants. The main amplifier concept is based on a He-gas-cooled multi-slab architecture similar to that employed in Mercury laser system. Our modeling quantifies the reduction of thermally induced phase aberrations and average depolarization in Yb3+:YAG slabs...
An external-cavity diode laser is reported with ultralow noise, high power coupled to a fiber, and fast tunability. These characteristics enable the generation of an optical frequency comb in a silica micro-resonator with a single-soliton state. Neither an optical modulator nor an amplifier was used in the experiment. This demonstration greatly simplifies the soliton generation setup and repres...
We report on the first diode-pumped Yb:CaGdAlO4 regenerative amplifier in the sub-100-fs regime. It generates pulses at a central wavelength of 1047 nm with up to 24 μJ energy (after compression) at a repetition rate of 50 kHz. The measured pulse duration is 97 fs, with a spectral bandwidth of 19 nm. We describe in detail how nonlinear effects are optimally used to compensate gain narrowing in ...
This paper very shortly describes some hardware solutions of central processor (CPU) of BESM-6. CPU had very deep instruction pipe with an associative buffer for instructions and an associative buffer for data with original protocol. Logical and storage elements used only domestic discrete components. Main logical unit based on differential amplifier with pyramid of rich diode logic and parapha...
This paper gives important features of CMOS and BiCMOS four-diodes direct coupled tuneable resistance. Circuit performances of three resistance topologies are explored and compared with the traditional CMOS tuneable transresistance designed from a one-stage operational transconductance amplifier (OTA). Simulations results have been realised using nominal parameters of the AMS 0.8μm CMOS and BiC...
− Tunnel diode I-V characteristics were measured (Figure 1.) − Mathematical manipulations were then carried out on the measured data to roughly estimate the function that could be used to describe the I-V characteristic curves. − First model was proposed and revised until a rough match between the measured data and simulated data was obtained. − The final model is a voltage-controlled current s...
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