Recent experiments have studied the tunneling current between the edges of a fractional quantum Hall liquid as a function of temperature and voltage. The results of the experiment are puzzling because at "high" temperature (600-900 mK) the behavior of the tunneling conductance is consistent with the theory of tunneling between chiral Luttinger liquids, but at low temperature it strongly deviate...

This paper presents an analytical model for the potential distribution of a p-n-i-n tunneling field effect transistor (TFET). Using the potential distribution, the tunneling drain current is derived analytically by integrating the band-to-band tunneling generation rate over the device volume. According to our knowledge, there is no analytical analysis for this structure in the literature, and t...

This Perspective describes the emergence of tunneling control as a new reactivity paradigm in chemistry. The term denotes a tunneling reaction that passes through a high but narrow potential energy barrier, leading to formation of a product that would be disfavored if the reaction proceeded by passage over kinetic barriers rather than through them. This reactivity paradigm should be considered ...

Tunneling spectroscopy has been used to detect the photoexcitation of charge carriers in the wide band-gap semiconductors, ZnO and cubic SiC. Because the process is energy sensitive, valence-toconduction hand or defect charge transfer transitions may be selectively excited and detected with the scanning tunneling microscope. Two types of transitions were detected which change the tunneling resp...

We have developed a material specific theoretical framework for modeling scanning tunneling spectroscopy (STS) of high-temperature superconducting materials in the normal as well as the superconducting state. Results for Bi2Sr2CaCu2O8+delta (Bi2212) show clearly that the tunneling process strongly modifies the STS spectrum from the local density of states of the dx2-y2 orbital of Cu. The domina...

High quality Au/hBN/Au tunnel devices are fabricated using transferred atomically thin hexagonal boron nitride as the tunneling barrier. All tunnel junctions show tunneling resistance on the order of several kΩ/μm. Ohmic I-V curves at small bias with no signs of resonances indicate the sparsity of defects. Tunneling current shot noise is measured in these devices, and the excess shot noise show...

We investigate the spin- and energy-dependent tunneling through a single organic molecule (CoPc) adsorbed on a ferromagnetic Fe thin film, spatially resolved by low-temperature spin-polarized scanning tunneling microscopy. Interestingly, the metal ion as well as the organic ligand show a significant spin dependence of tunneling current flow. State-of-the-art ab initio calculations including als...

We exploit a plasmon mediated two-step momentum down-conversion scheme to convert low-energy tunneling electrons into propagating photons. Surface plasmon polaritons (SPPs) propagating along an extended gold nanowire are excited on one end by low-energy electron tunneling and are then converted to free-propagating photons at the other end. The separation of excitation and outcoupling proves tha...

We calculate the tunneling current in a quantum Hall bilayer system in the strong magnetic field limit. We model the bilayer electron system as two Wigner crystals coupled through interlayer Coulomb interactions, treated in the continuum limit. We generalized the Johansson and Kinaret (JK) model and were able to study the effect of the low energy out-of-phase magnetophonon modes produced as a r...

Electron-tunneling dynamics through a semiconductor double-barrier structure in the presence of plane-wave phonons is investigated by directly solving the time-dependent Schrodinger equation. The temporal profile of tunneling current density due to an electron wave packet incident at the resonant energy channel E„ is calculated at different lattice temperatures. The magnitude of the tunneling c...