Articles you may be interested in Publisher's Note: " High-voltage field effect transistors with wide-bandgap-Ga2O3 nanomembranes " [Appl. Phys. Isotope disorder of phonons in GaN and its beneficial effect on high power field effect transistors Appl. Gate leakage effects and breakdown voltage in metalorganic vapor phase epitaxy AlGaN/GaN heterostructure field-effect transistors Appl. Two-channe...

quantum heterostructures at low fields Emre Sari, Sedat Nizamoglu, In-Hwan Lee, Jong-Hyeob Baek, and Hilmi Volkan Demir Department of Electrical and Electronics Engineering, Bilkent University, Ankara, TR-06800 Bilkent, Turkey Nanotechnology Research Center, Bilkent University, Ankara, TR-06800 Bilkent, Turkey Institute of Materials Science and Nanotechnology, Bilkent University, Ankara, TR-068...

We designed and successfully fabricated a ZnS/CdS 3D mesoporous heterostructure with a mediating Zn1-x Cd x S interface that serves as a charge carrier transport channel for the first time. The H2-production rate and the stability of the heterostructure involving two sulfides were dramatically and simultaneously improved by the careful modification of the interface state via a simple post-annea...

Bandpass filter characteristics is numerically computed for semiconductor heterostructure based onedimensional photonic crystal at different optical wavelengths by varying the structural parameters taking GaAs/AlxGa1-xAs as a suitable composition subject to normal incidence of electromagnetic wave. Transfer matrix technique is used for numerical analysis. Results are compared with conventionall...

An analytic expression of transmittance based on the Airy wavefunctions approach has been derived for an electron through an anisotropic heterostructure with an applied voltage to the barrier of the heterostructure. The Si(110)|Si0.5Ge0.5|Si(110) heterostructure was used to examine the analytic expression. In order to evaluate the Airy wavefunctions approach, the transfer matrix method, which i...

(Received 1 August 2012; accepted 10 September 2012; published online 8 October 2012) AlN/nþ-GaN heterostructure samples with AlN barrier layer thickness between 1 nm and 4 nm have been analyzed by electrochemical capacitance-voltage measurements with a semiconductorelectrolyte contact to estimate the surface potential of this heterostructure. The combination of using a semiconductor-electrolyt...

The electron spin resonance ~ESR! of two-dimensional electrons is investigated in a gated GaAs/AlGaAs heterostructure. We found that the ESR resonance frequency can be tuned by means of a gate voltage. The front and back gates of the heterostructure produce opposite g-factor shift, suggesting that electron g factor is being electrostatically controlled by shifting the equilibrium position of th...

The rate of LO-phonon assisted interband transitions in an InAs/GaSb double quantum well heterostructure is compared with the elastic interband tunneling rate through the heterostructure ‘leaky window’. We show that the phonon-assisted process can dominate over the elastic tunneling if the initial and final electron states anticross and the anticrossing gap is smaller than the LO-phonon energy....

A GaN-based heterostructure barrier diode (HBD) similar to GaAs planar-doped barrier diodes is demonstrated. Instead of doping with impurities, the polarization-induced sheet charge at the III-nitride heterojunction behaves as an effective δ-doping. An AlGaN/GaN heterostructure is used for the demonstration. The rectifying characteristics of the polarizationinduced GaN HBDs can be tuned by cont...

This paper deals with Schottky and Heterostructure Barrier devices fabricated for planar integration in a 560 GHz Subharmonic Mixer (SHM). Taking advantage of an InP-based technology, two barrier types, metal/InGaAs and metal/InAlAs/InGaAs respectively, have been investigated. The design was carried out by means of self-consistent quantum calculations and the fabrication involved submicron Tsha...