نتایج جستجو برای: v characteristics
تعداد نتایج: 948095 فیلتر نتایج به سال:
Si-based resonant interband tunnel diodes (RITD) were monolithically integrated with Si/SiGe heterojunction bipolar transistors (HBT) on silicon substrates effectively creating a 3-terminal negative differential resistance (NDR) device. We demonstrate that the room temperature NDR in the IC–VEC characteristics under common emitter configuration can be controlled by a third terminal which is the...
The Strict Avalanche Criterion (SAC) was introduced by Webster and Tavares in a study of cryptographic design criteria. This is an indicator for local property. In order to improve the global analysis of cryptographically strong functions, Zhang and Zheng introduced the global avalanche characteristics (GAC). The sum-of-squares indicator related to the GAC is defined as σf = ∑ v ∆ 2 f (v), wher...
Considering that the effective yield of a panel is equal to its total number of hours of solar radiation and temperature, only the effects of temperature and solar radiation intensity at the maximum power point (MPP) are investigated in this article. By collecting temperature data, sun's radiation hours from six synoptic meteorological stations in Kermanshah Province over the course of an e...
Naturally acquired immunity to Plasmodium falciparum may be linked to key features of the immune system that change during normal development and ageing. Evidence of this was seen in non-immune Javanese transmigrants taking up residence in hyperendemic Irian Jaya, Indonesia. After 1-2 years of residence, the adult migrants had less frequent and less intense parasitaemias than their children. Sp...
The compound semiconductor channel materials have recently drawn great attention because of their potential to solve the upcoming Si MOSFETs scaling problem and become the next generation high-speed, low-power devices. In this work we review the latest silicon technology and report the process development of submicron III-V MOSFETs. A new approach has been demonstrated to overcome the high inte...
We report the capacitance-voltage (C-V) measurements on thin-film transistors (TFTs) using solution-processed semiconducting carbon nanotube networks with different densities and channel lengths. From the measured C-V characteristics, gate capacitance and field-effect mobility (up to ~50 cm(2) V(-1) s(-1)) of the TFTs were evaluated with better precision compared with the results obtained from ...
A multiwall carbon nanotube (MWCNT) sponge network, coated by ALD V(2)O(5), presents the key characteristics needed to serve as a high-performance cathode in Li-ion batteries, exploiting (1) the highly electron-conductive nature of MWCNT, (2) unprecedented uniformity of ALD thin film coatings, and (3) high surface area and porosity of the MWCNT sponge material for ion transport. The core/shell ...
Considering that the effective yield of a panel is equal to its total number of hours of solar radiation and temperature, only the effects of temperature and solar radiation intensity at the maximum power point (MPP) are investigated in this article. By collecting temperature data, sun's radiation hours from six synoptic meteorological stations in Kermanshah Province over the course of an e...
Gain-of-function mutations of Na(V)1.7 have been shown to produce two distinct disorders: Na(V)1.7 mutations that enhance activation produce inherited erythromelalgia (IEM), characterized by burning pain in the extremities; Na(V)1.7 mutations that impair inactivation produce a different, nonoverlapping syndrome, paroxysmal extreme pain disorder (PEPD), characterized by rectal, periocular, and p...
The behaviour of the (I-V) characteristics is investigated in n+-i-n+ highly compensated Si resistors at temperatures 4.2-45K. The conduction mechanisms are discussed in detail here. The prebreakdown and breakdown regions of I-V characteristics were simulated by a one-dimensional model including the evidence of impurity high compensation and freeze out effects as well as the shallow-dopants imp...
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