We report on-chip InGaAs nanopillar lasers directly grown on silicon using a lowtemperature, CMOS-compatible MOCVD process. A novel whispering gallery and Fabry-Perot hybrid cavity mode provides optical feedback for laser oscillation in as-grown subwavelength nanopillars. ©2010 Optical Society of America OCIS codes: (140.5960) Semiconductor lasers; (230.3120) Integrated optics devices; (130.313...

GaN was grown on porous silicon (PS) substrates by Metalorganic Vapour Phase Epitaxy at temperature of 1050 8C. An additional AlN buffer layer is used between GaN and PS. The crystalline quality and surface morphology of GaN films were studied by X-ray diffraction and scanning electron microscope (SEM), respectively. Preferential growth of hexagonal GaN with h00.1i direction is observed and is ...

An x-ray-diffraction method that directly senses the phase of the structure factor is demonstrated and used for determining the local polarity of thin ferroelectric films. This method is based on the excitation of an x-ray standing-wave field inside the film as a result of the interference between the strong incident x-ray wave and the weak kinematically Bragg-diffracted x-ray wave from the fil...

GaN layers with wurtzite structure were found to exhibit intense photoluminescence (PL) at 3.47eV (T = 10K) corresponding to recombination of excitons bound to neutral donors. The dependence of this luminescence on the growth conditions, layer thickness and density of excitation power was studied. New PL bands were evidenced in the UV region under high levels of excitation (Iexc 3 0.56mJ/cm ).

We investigate the MOCVD growth characteristic of the In0.47Ga0.53As layers lattice matched to InP using TMAs as an alternative source of arsine. Improvement of the InGaAs quality was studied by means of PL lines, the origin of photoluminescence (PL), atomic force microscopy. Low temperature PL spectra exhibit a broad this broadening was analyzed using quantitative models for the linewidth of b...

MOVPE growth of inP with trimethylindium-trimethylphosphane (CH,)3In-P(CH,)3, a metalorganic adduct and phosphane P(CH3)3 are reported. The growth temperature was varied between 500 and 600 C. The growth rate is about 1 2 ym/h. The results of this epitaxial process are compared with results on the PCl3/ln/H2-system. Finally n+/n/n+-structures are used for the fabrication of Gunn oscillators in ...

The breakdown characteristics of metal-AlN-metal structures are reported as a function of contact diameter. The bulk AlN was grown by a HVPE method, resulting in a resistivity of 4 10 X cm. Front-side contact diameters of 175–600 lm were fabricated, displaying breakdown voltages up to 6300 V at 25 C. Breakdown appeared to initiate at internal surfaces related to grain boundaries or cracks in th...

GaN films have been grown at 1050 8C on porous silicon (PS) substrates by metalorganic vapour phase epitaxy. The annealing phase of PS has been studied in temperature range from 300 to 1000 8C during 10 min under a mixture of ammonia (NH3) and hydrogen (H2). The PS samples were characterized after annealing by scanning electronic microscope (SEM). We observed that the annealing under the GaN gr...

The effects of mixed gas annealing ambient of O2 and N2 on electrical and optical characteristics of p-type Mg-doped GaN grown by MOCVD were investigated at various annealing condition. A mixed gas ambient of 80% O2 and 20% N2 at 750°C for 2 minutes was found to be an optimum annealing condition with improvements on activation efficiency of Mg acceptor compared with annealing in pure O2 or N2 g...