The photoconductance of poiycrystaHine silicon films at photon energies smaller than the band gap has been measured as a function of intensity applying a 1.3 pm wavelength semiconductor laser. The observed photosignaI increases superlinearly at low intensities and saturates above about 1.5 W / em 2. This distinct nonlinearity is caused by a significant energy dependence of optical to thermal cr...

Li2Ni8O10 and LiMn2O4 Nanoparticles as cathode materials of lithium ion battery, were successfully synthesized using lithium acetate, nickel and manganese acetate as Li, Ni and Mn sources and stearic acid as a complexing reagent. The structure of the obtained products were characterized by FT-IR and XRD. The shape, size and distribution of the Li2Ni8O10 and LiMn2O4 nanoparticles were observed b...

Si/Si1-xGex axial heterostructured nanowires (hNW) are under investigation for downscaling of metaloxide-semiconductor field-effect transistors (MOSFETs). New architectures based on vertically aligned nanowires tunnel-FETs are promising candidates for reduced power dissipation and low voltage operation [1]. The axial growth of lattice mismatched heterostructures would allow band-gap engineering...

A diketopyrrolopyrrole (DPP) with fluorenone (FN) based low band gap alternating copolymer (PDPPT-alt-FN) has been synthesized via Suzuki coupling. PDPPT-alt-FN exhibits a deep HOMO level with a lower band gap. Fabricated organic thin film transistors using PDPPT-alt-FN as a channel semiconductor show p-channel behaviour with the highest hole mobility of 0.083 cm(2) V(-1) s(-1) measured in air.

Metal-insulator-IV-VI compound semiconductor tunnel junctions were formed for both single and polycrystalline semiconductor material. I-V and conductance characteristics were taken as a function of temperature, and magnetic field. The experimental results were interpreted in terms of a conventional tunneling theory, and yielded information on Fermi energies, band gaps, temperature dependence of...

Copper Telluride (CuTe) thin films have been successfully deposited on a glass substrate Fluorine Tin oxide (FTO) by electrodeposition technique. The absorbance was measured using M501 UV-visible spectrophotometer in the wavelength range of 200-900nm. Copper Telluride (CuTe) thin films were investigated at room temperature. Optical absorption study showed that CuTe films were of indirect band g...

Based on first principles calculations, we predict semihydrogenated graphitic BN (sh-BN) sheet is a potential metal-free visible-light driven photocatalyst for water splitting. The ground state of sh-BN is a strip-like antiferromagnetic semiconductor with a band gap suitable for visible-light absorption. The redox potentials of water splitting are all located inside the band gap and the probabi...

Density-functional theory DFT calculations have been carried out using the generalized gradient approximation GGA to investigate the atomic and electronic structure and stability of the gold oxides Au2O3 and Au2O. We find that Au2O3 is a semiconductor and is more stable than Au2O, which is an endothermic system, and only metastable. The higher stability of Au2O3 is attributed to a greater hybri...

Optical modeling was applied for obtaining absorbance spectra and band gap values for different morphology of ZnO semiconductor. In optical modeling, the relative permittivity scalars of zinc oxide coral like nanorods were calculated using the Bruggeman homogenization formalism. ZnO nano rods (ZONRs) as a nucleus layer were fabricated on the Indium Tin Oxide (ITO) by chronoamperometry (CA) in a...

We employ the concepts of band theory to describe the behavior of electromagnetic waves in three-dimensionally periodic face-centered-cubic (fcc) dielectric structures. This can produce a "photonic band gap" in which optical modes, spontaneous emission, and zero point fluctuations are all absent. In the course of a broad experimental survey, we have found that most fcc dielectric structures hav...