In this paper, the internal structure of novel multiphase gallium nitride nanowires in which multiple zinc-blende and wurtzite crystalline domains grow simultaneously along the entire length of the nanowire is investigated. Orientation relationships within the multiphase nanowires are identified using high-resolution transmission electron microscopy of nanowire cross-sections fabricated with a ...

Crystal structure and defects have been shown to have a strong impact on III-V nanowire properties. Recently, it was demonstrated that the issue of random stacking and polytypism in semiconductor nanowires can often be controlled using accessible growth parameters such as temperature, diameter, and V/III ratio . In addition, it has been shown that crystal phase can be tuned selectively between ...

A sample of the β-Ga2O3/wurtzite GaN heterostructure has been grown by dry thermal oxidation of GaN on a sapphire substrate. X-ray diffraction measurements show that the β-Ga2O3 layer was formed epitaxially on GaN. The valence band offset of the β-Ga2O3/wurtzite GaN heterostructure is measured by X-ray photoelectron spectroscopy. It is demonstrated that the valence band of the β-Ga2O3/GaN struc...

We report resonant Raman scattering (RRS) by the TO, LO, and 2 LO modes of single wurtzite and zincblende GaAs nanowires. The optical band gap of wurtzite GaAs is 1.460 eV± 3meV at room temperature, and 35± 3meV larger than the GaAs zinc-blende band gap. Raman measurements using incoming light polarized parallel and perpendicular to the wire c axis allowed us to investigate the splitting of hea...

Submitted for the MAR08 Meeting of The American Physical Society Stability and structure of free-standing III-V nanorods: An ab initio investigation ROMAN LEITSMANN, FRIEDHELM BECHSTEDT, Institut für Festkörpertheorie und -optik, Friedrich-Schiller Universität Jena — The interest in anisotropic needlelike crystals has been recently stimulated by the potential need as building blocks for nanosca...

We present a first principles density functional theory based study of the impact of uniaxial strain on the structural and electronic properties of bulk ZnX X=O, S, Se, Te in the wurtzite and zinc blende phases. The strain axis was chosen to be along the 0001 and 111 directions, respectively, for the wurtzite and zinc blende systems. For large uniaxial compressive strains, all systems undergo a...

The semiconductor CdS is generally found in the wurtzite structure. Prior experimental and theoretical results confirm that the semiconductor CdS nanoparticles maintain a wurtzite structure for diameters greater than 6 nm. There is disagreement in the literature for sizes smaller than 6 nm. We use the density-functional theory FIREBALL code and perform finite-temperature molecular dynamics simu...

Infrared reflection and Raman spectroscopies have been employed to derive zone center and some zone boundary phonon energies in wurtzite and in zincblende GaN (Table 1.) [1-10]. Phonon and coupled modes have been employed to characterize stress conditions and carrier densities in thin films and device structures. Due to the wide bandgap non-resonant Raman scattering is easily performed using vi...

ZnO nanowires are a promising nanomaterial for applications in the fields of photocatalysis, nano-optoelectronics, and reinforced composite materials. However, the challenge of producing large-scale ZnO nanowires has stunted the development and practical utilization of ZnO nanowires. In this study, a modified carbothermal reduction method for preparing large-scale ZnO nanowires in less than 5 m...

Cadmium doped zinc oxide is a promising optical material to enhance the luminescence for possible applications in luminescent devices. The Cd0.1Zn0.9O thin films were deposited on the alumina substrates by the sol gel spin coating method using three different solvents viz. methanol, ethanol and isopropanol. The prepared thin films are preheated at 250° C after each coating and annealed at a tem...