Abstract The variations of valence band energy with stress effects in zinc-blende GaN are proposed this paper. calculations based on a six-band strain dependent k·p Hamiltonian, and can be self-consistently solved by Schrödinger-Poisson equation. Accurate physical pictures given for the quantized subband structure under biaxial uniaxial (001) surface along [110] direction accounting quantum con...

The semiconductor hole gas can be viewed as the companion of the classic interacting electron gas with a more complicated band structure and plays a crucial role in the understanding of ferromagnetic semiconductors. Here we study the dielectric function of a homogeneous hole gas in zinc blende III–V bulk semiconductors within random phase approximation with the valence band being modeled by Lut...

Optical transmittance measurements on epitaxial, phase-pure, wurtzite-structure ScxGa1-xN films with 0 ≤ x ≤ 0.26 showed that their direct optical band gaps increased from 3.33 eV to 3.89 eV with increasing x, in agreement with theory. These films contained I1and I2-type stacking faults. However, the direct optical band gaps decreased from 3.37 eV to 3.26 eV for ScxGa1-xN films which additional...

The authors report the growth of needle-like high density quaternary Zn0.87Cd0.13Se0.98Te0.02nanotips on oxidized Si(100) substrate. It was found that average length and average diameter of the nanotips were 1.3 μm and 91 nm, respectively. It was also found that the as-grown ZnCdSeTe nanotips exhibit mixture of cubic zinc-blende and hexagonal wurtzite structures. Furthermore, it was found that ...

The spatial strain distribution in and around a single axial InAs 1-x Px hetero-segment in an InAs nanowire was analyzed using nano-focused X-ray diffraction. In connection with finite-element-method simulations a detailed quantitative picture of the nanowire's inhomogeneous strain state was achieved. This allows for a detailed understanding of how the variation of the nanowire's and hetero-seg...

A Michelson interferometer was used as a precise detector in the Mirage effect configuration in order to determine the thermal diffusivity of the diluted rnagnetic semiconductor Cd, -,Mn,Te, in the concentration range O<x<0.6 at roorn ternperature. This zinc-blende temary alloy exhibits an alrnost linear behavior of the thermal diffusivity as a function of Mn concentration. This trend is simila...

We investigate the possibility of spin-preserving symmetries due to the interplay of Rashba and Dresselhaus spin-orbit coupling in n-doped zinc-blende semiconductor quantum wells of general crystal orientation. It is shown that a conserved spin operator can be realized if and only if at least two growth direction Miller indices agree in modulus. The according spin-orbit field has in general bot...

Cadmium selenide (CdSe) nanoplatelets of a few atomic layers thick exhibit extremely sharp photoluminescence peaks and are synthesized in the zinc blende crystal structure, whereas the most stable bulk polymorph of CdSe is the wurtzite structure. These platelets can be synthesized very monodispersely in thickness, and are covered with acetate ligands. Here, we show by means of density functiona...