The problem of the resistive wall mode (RWM) is studied in cylindrical geometry and compared to experimental observations from HBT-EP tokamak. In HBT-EP, a dynamical RWM plasma response is studied by applying static, rotating and phase-flip external magnetic perturbations. The plasma response to the applied perturbation is included via the permeability matrix, P = 1/(−s+iα). Here, s is the norm...

A wideband amplifier up to 50 GHz has been implemented in a 0.25 μm, 200 GHz f t SiGe BiCMOS technology. Die size was 0.7×0.73 mm. The two-stage design achieves more than 11 dB gain over the whole 20 to 50 GHz band. Gain maximum was 14.2 dB at 47.5 GHz. Noise figure was lower than 9 dB up to 34 GHz and a current of 30 mA was drawn from a 4 V supply. To the author’s best knowledge this is the hi...

Large-signal behavior of HBT devices can depend strongly on the type of source used to bias the base of the devices. Understanding of this behavior is advanced using sample device measurements and model simulations. The device used is a wafer-level InGaP/GaAs HBT represented with a modified GummelPoon non-linear model. Results show that the use of constant voltage source allowed for a higher po...

A novel ballast resistor network is proposed to achieve a better thermal management in HBT power cells without degrading the RF performances. Experiments were conducted on two HBT power amplifiers. They occupy same area. One was designed using conventional ballast network. The other uses proposed novel network. Temperature comparisons were made based on the same current density. Infrared camera...

An LNA design and simulation using ED02AH Technology in 0.2-μm GaAs Pseudomorphic HEMT process and 0.35-μm HBT SiGe BiCMOS process are reported as a case of comparison. This work uses an identical circuit topology for both processes which is a 3-volt two stage cascode single-ended topology with a resistive shunt feedback. This LNA is developed for 2.4 GHz ISM band applications. This letter desc...

A single-stage X-band MMIC power amplifier incorporating a SiGe/Si power HBT and lumped passive components is reported. The power HBT is characterized by an fmax of 67 GHz and a BVCBO of more than 24 V. The matching circuits were designed for maximum output power using on-chip spiral inductors and SiO MIM capacitors. Continuous wave measurements were made at 8.4 GHz, under class A operation. Th...

In order to further improve the high-frequency characteristics of highly scaled SiGe HBT and consider compatibility with mature CMOS technology, a new structure is proposed by introducing an embedded Si1−yGey stress raiser produce additional uniaxial in bulk collector region. The energy-band configuration multi-layered emitter has been investigated estimation strain effect, then influence on el...

Two-particle correlations from RHIC have provided a surprising snapshot of the final state at RHIC. In this talk I discuss the nature of the HBT puzzle and attempt to delineate several factors which might ultimately resolve the issue.

Interference by human anti-animal immunoglobulins, commonly referred to as heterophile antibodies, in immunologic assays is known to be an important consideration for medical testing laboratories (1–3). Although automated immunometric assays are formulated to reduce these effects, it is unlikely that complete elimination occurs (2 ), and artifactual results attributable to heterophile antibodie...