نتایج جستجو برای: کامپوزیت cc sic

تعداد نتایج: 49427  

2011
Muhammad Sahimi Theodore T. Tsotsis

Silicon carbide (SiC) is a promising material for the preparation of high temperature membranes [1-5] due to its many unique properties such as high thermochemical stability, high thermal conductivity and resistance to abrasion. In our studies, SiC microporous membranes are fabricated using two different techniques. The first approach involves the pyrolysis of pre-ceramic polymeric films [3,4],...

ضیا والفی مهدی هاشمی نادر پروین

در این پژوهش تولید پوشش نانوساختار Cr2O3-20YSZ-10SiC از طریق آسیاکاری جداگانه پودرهای اولیه اکسیدکروم، YSZ و کاربیدسیلیسیوم به مدت پنج ساعت در آسیاب با انرژی بالا، مخلوط پودرهای آسیاشده به ترتیب به نسبت‌های 70، 20 و 10 در­صد حجمی و در ادامه پاشش پودرهای آگلومره بر سطح زیرلایه فولادی ضدزنگ 304L انجام گرفت. پس از آن خواص مکانیکی پوشش‌های تولیدی شامل سختی، استحکام‌ چسبندگی و ...

2015
N. Liu A. Steele L. R. Nittler

Introduction: Silicon carbide is a particularly interesting phase because more than a hundred different polytypes can be formed in the laboratory. The formation of these polytypes depends strongly on growth conditions (e.g., temperature, pressure). Daulton et al. [1] used TEM to study the microstructures of ~500 presolar SiC grains in an acid residue of the Murchison meteorite (KJB fraction of ...

2012
Xiujun Wang Jiaping Wang Juan Zhang

With increasing interest in the carbon cycle on arid land, there is an urgent need to quantify both soil organic carbon (SOC) and inorganic carbon (SIC) thus to assess various methods. Here, we present a study employing three methods for determinations of SOC and SIC in the Yanqi Basin of northwest China. We use an elemental analyzer for both SOC and SIC, the Walkley-Black method for SOC, a mod...

2013
J Sastre

Background and objective: The use of fractional exhaled nitric oxide (FeNO) concentration has been proposed as a surrogate marker for monitoring airway response to specifi c inhalation challenge (SIC). We investigated the usefulness of FeNO measurements for monitoring airway response to SIC with occupational agents. Material and methods: Workers with suspected occupational asthma were recruited...

2014
Weili Xie Qi Xie Meishan Jin Xiaoxiao Huang Xiaodong Zhang Zhengkai Shao Guangwu Wen

Silicon carbide (SiC), a compound of silicon and carbon, with chemical formula SiC, the beta modification ( β-SiC), with a zinc blende crystal structure (similar to diamond), is formed at temperature below 1700°C. β-SiC will be the most suitable ceramic material for the future hard tissue replacement, such as bone and tooth. The in vitro cytotoxicity of β-SiC nanowires was investigated for the ...

پایان نامه :وزارت علوم، تحقیقات و فناوری - دانشگاه صنعتی اصفهان - دانشکده مهندسی مواد 1391

در پژوهش حاضر دو فرایند مختلف نورد تجمعی پیوندی (arb) و نورد تجمعی پیوندی متقاطع (crarb) برای ساخت نانوکامپوزیت هیبریدی al/al2o3/sic به کار گرفته شد. از فرایند آندایزینگ برای افزودن ذرات آلومینا به زمینه استفاده گردید. ذرات کاربیدسیلیسیم نیز به صورت پودر بین لایه ها توزیع شدند. فرایندهای arb و crarb به طور موفقیت آمیزی بر روی نمونه های شامل ورق های آلومینیوم، لایه های آلومینا و ذرات پودر کاربید...

Journal: :international journal of advanced design and manufacturing technology 0
ali reza moradkhani hamid reza baharvandi abbas vafaeesefat mehdi tajdari

abstract: in this study, al 2 o 3 –sic nanocomposites have been fabricated by mixing of alumina powder containing 0.05% weight magnesium oxide and silicon carbide nano powders, followed by hot pressing at 1650 0 c. the mechanical properties of al 2 o 3 -sic nanocomposites containing different volume fraction (2.5, 5, 7.5, 10 and 15%) of nano scale sic particles were investigated and compared wi...

2002
Leon M. Tolbert Burak Ozpineci Syed K. Islam Fang Z. Peng

The superior properties of silicon carbide (SiC) power electronic devices compared with silicon (Si) are expected to have a significant impact on next-generation vehicles, especially hybrid electric vehicles (HEVs). The system-level benefits of using SiC devices in HEVs include a large reduction in the size, weight, and cost of the power conditioning and/or thermal systems. However, the expecte...

2013
Patrick Fiorenza Filippo Giannazzo Lukas K Swanson Alessia Frazzetto Simona Lorenti Mario S Alessandrino Fabrizio Roccaforte

The electrical compensation effect of the nitrogen incorporation at the SiO2/4H-SiC (p-type) interface after thermal treatments in ambient N2O is investigated employing both scanning spreading resistance microscopy (SSRM) and scanning capacitance microscopy (SCM). SSRM measurements on p-type 4H-SiC areas selectively exposed to N2O at 1150 °C showed an increased resistance compared to the unexpo...

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