We report accurate energetics of defects introduced in GaN on doping with divalent metals, focusing on the technologically important case of Mg doping, using a model that takes into consideration both the effect of hole localization and dipolar polarization of the host material, and includes a well-defined reference level. Defect formation and ionization energies show that divalent dopants are ...

We report direct self-heating measurements for AlGaN/GaN heterostructure field effect transistor grown on SiC. Measurements are carried out using micro-Raman scattering excited by above band gap ultraviolet and below band gap visible laser light. Ultraviolet excitation probes the GaN near the AlGaN/GaN interface region of the device where the two-dimensional electron gas carries the source-drai...

Introduction Recent history has seen the market for Gallium Nitride (GaN) devices grow dramatically with the LED chip market alone predicted to reach $3.4 billion by the end of 2003. Combine this with the emergence of next generation DVD players, which use the GaN blue laser technology, unique GaN high power/high frequency devices and GaN photodetectors and the importance of GaN technology can ...

The Schottky barrier heights of metal contacts, including WSi0.8, Cr, Ti, Pt, and Ni, on n-type gallium nitride GaN with a GaN cap layer grown at low-temperature LTG were studied. Higher barriers can be formed by introducing LTG GaN on top of the conventional structures. The higher Schottky barrier observed in samples with the LTG GaN cap layer may be due to the facts that the high-resistivity ...

We have demonstrated that GaN can be grown epitaxially by atmospheric pressure metalorganic chemical vapor deposition on an aluminum oxide compound layer utilized as an intermediate layer between GaN and a Si~111!. X-ray diffraction measurement indicates that single-crystal hexagonal GaN with its basal plane parallel to the Si~111! plane is grown. Using a scanning electron microscope, the macro...

We report on our investigation of the electrical properties of metal/Al2O3/GaN metal-insulatorsemiconductor capacitors. We determined the conduction band offset and interface charge density of the alumina/GaN interface by analyzing the capacitance-voltage characteristics of atomic layer deposited Al2O3 films on GaN substrates. The conduction band offset at the Al2O3/GaN interface was calculated...

Vertical thin-GaN LED was successfully fabricated on the GaN LED epi-layers grown on the patternedsapphire substrate with the pyramidal pattern by low-temperature Cu/Sn/Ag wafer bonding at 150 C. An inverted pyramidal pattern formed on the n-GaN surface after the GaN epi-layer was transferred onto Si wafer, which resulted from the pyramidal pattern on the patterned-sapphire substrate. The inver...

In this article two methods for improvements of (112̄2) oriented semipolar GaN grown by MOVPE on pre-structured sapphire substrates are investigated. The integration of a SiNx interlayer helps to obtain a better crystal quality. Also the overgrowth of the MOVPE samples by HVPE is a way to obtain a smoother GaN surface. A high incorporation of oxygen on (112̄2) oriented GaN compared to (0001) orie...

Traditional Chinese medicine formulates treatment according to body constitution (BC) differentiation. Different constitutions have specific metabolic characteristics and different susceptibility to certain diseases. This study aimed to assess the characteristic genes of gan-shen Yin deficiency constitution in different diseases. Fifty primary liver cancer (PLC) patients, 94 hypertension (HBP) ...

Submitted for the MAR13 Meeting of The American Physical Society Comparative Study on Intersubband Absorption in AlGaN/GaN and AlInN/GaN Heterostructures Grown on Low-Defect Substrates COLIN EDMUNDS, LIANG TANG, JIAYI SHAO, DONGHUI LI, GEOFF GARDNER, MICHAEL MANFRA, OANA MALIS, Purdue University, ANDREW GRIER, ZORAN IKONIC, PAUL HARRISON, University of Leeds, DIMITRI ZAKHAROV, Brookhaven Nation...