نتایج جستجو برای: annealing
تعداد نتایج: 26618 فیلتر نتایج به سال:
The yeast RAD52 gene is essential for homology-dependent repair of DNA double-strand breaks. In vitro, Rad52 binds to single- and double-stranded DNA and promotes annealing of complementary single-stranded DNA. Genetic studies indicate that the Rad52 and Rad59 proteins act in the same recombination pathway either as a complex or through overlapping functions. Here we demonstrate physical intera...
Post-deposition annealing effects on nanomechanical properties of granular TiO2 films on soda-lime glass substrates were studied. In particular, the effects of Na diffusion on the films' mechanical properties were examined. TiO2 photocatalyst films, 330 nm thick, were prepared by dip-coating using a TiO2 sol, and were annealed between 100 °C and 500 °C. Film's morphology, physical and nanomecha...
It has been widely reported that the microstructure refinement of TiAl alloys can be achieved by massive transformation and subsequent annealing in α2 + γ two phase field. To achieve this goal, several heat treatment parameters must be adjusted, including the heat treatment temperature around single α phase field, the annealing temperature, and the annealing time for the precipitation of α2 pha...
The stability of glow peaks in 6LiF:Mg,Ti (TLD-600) exposed to a high-energy Fe-ion beam was examined in comparison to 137Cs gamma-ray irradiation under changing annealing conditions. The peak areas induced by the Fe ions were much smaller than those by gamma-rays. The sizes and positions of peaks 3-5 in Fe-ion irradiated samples were hardly changed after post-annealing at 100 degrees C x 30 mi...
Photoelectrodes made of submicrometer-sized aggregates of ZnO nanocrystallites coated with TiO2 layer by atomic layer deposition with different annealing temperatures were investigated for dye-sensitized solar cells. Although the annealing at 350 C is commonly used for the ZnO aggregates in order to preserve the desired large surface area and mesoporous structure, the presence of ALD-TiO2 layer...
ZnO thin films were deposited on Si(400) substrates by e-beam evaporation technique, and then post-annealed at different annealing temperatures (200-800°C). Dependence of the crystallographic structure, nano-strain, chemical composition and surface physical Morphology of these layers on annealing temperature were studied. The crystallographic structure of films was studied using X-Ray Diffracti...
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