Concentration profiles of nitrogen in vacuum-annealed n-type single crystal (100) InP implanted with 1x10 30-keV N ions cm have been studied by the secondary ion mass spectrometry (SIMS) and nuclear resonance broadening (NRB) techniques. Damage induced by the nitrogen implantation was studied by Rutherford backscattering spectrometry (RBS) and channeling. Annealing the InP samples led to loss a...

We investigated the effects of different annealing ambients on the physical and electrical properties of LaAlO3 films grown by atomic layer deposition. Post-grown rapid thermal annealing (RTA) was carried out at 600 °C for 1 min in vacuum, N2, and O2, respectively. It was found that the chemical bonding states at the interfacial layers (ILs) between LaAlO3 films and Si substrate were affected b...

Thin films composed of titanium nitride doped with silver were deposited by DC reactive sputtering, with Ag contents varying between 0 and 50 at.%. The as-deposited samples were subjected to vacuum annealing treatments, with a range of temperatures varying from 200 to 500°C, in order to study the morphological and structural changes that may occur. The as-deposited samples showed three main zon...

Single crystals of a new iron-based superconductor Ba2Ti2Fe2As4O have been grown successfully via a Ba2As3-flux method in a sealed evacuated quartz tube. Bulk superconductivity with Tc ∼ 21.5 K was demonstrated in resistivity and magnetic susceptibility measurements after the as-grown crystals were annealed at 500 °C in vacuum for a week. X-ray diffraction patterns confirm that the annealed and...

The reversible transformations of thin magnetite (Fe3O4) and hematite (αFe2O3) films grown on Pt(111) and Ag(111) single crystals as support have been investigated by a combined low energy electron microscopy (LEEM) and low-energy electron diffraction (LEED) study. The conversions were driven by oxidation, annealing in ultrahigh vacuum (UHV), or Fe deposition with subsequent annealing. As expec...

This article reports on changes in electric double layer charge storage capacity as a function of surface chemistry and graphitic structure of porous carbon electrodes. By subjecting 20 nm to 2.0 μm sized carbide-derived carbons (CDCs) synthesized at 800 °C to high-temperature vacuum annealing at 700-1800 °C, we produce three-dimensional internal surface architectures with similar pore sizes an...

Since graphene, a single sheet of graphite, has all of its carbon atoms on the surface, its property is very sensitive to materials contacting the surface. Herein, we report novel Raman peaks observed in annealed graphene and elucidate their chemical origins by Raman spectroscopy and atomic force microscopy (AFM). Graphene annealed in oxygen-free atmosphere revealed very broad additional Raman ...

Vanadium oxide-molybdenum oxide (VO-MO) thin (21-475 nm) films were grown on quartz and silicon substrates by pulsed RF magnetron sputtering technique by altering the RF power from 100 to 600 W. Crystalline VO-MO thin films showed the mixed phases of vanadium oxides e.g., V2O5, V2O3 and VO2 along with MoO3. Reversible or smart transition was found to occur just above the room temperature i.e., ...

Epitaxial cobalt films in the thickness range of 3.9 to 8.6 nm were deposited on Al2O3@112̄0# substrates by dc magnetron sputtering at a substrate temperature of 315 °C. In situ annealing was performed in a vacuum after which the samples were rapidly quenched to room temperature in order to preserve the high temperature structure. Ex situ atomic-force microscopy revealed that surface roughening ...

This study investigated the potential effect of vacuum annealing on microstructure and hot salt corrosion behavior CoNiCrAlY/YSZ/LaMgAl11O19 (LMA) double-ceramic coatings. A hot-salt test revealed that sprayed coatings exhibited an unsatisfactory anti-corrosion performance, LMA layer underwent severe fracture degradation. Vacuum induced a prominent recrystallization amorphous phase in layer, tr...