in this experimental work, by using the method of plasma-chemical etching, we have dealtwith the causes of the creation of a distorted layer on the surface of silicon wafers during mechanicalmachining processes, in addition, the elucidation of connections between the structure of this layer andcharacteristic parameters of the mechanical strength of these wafers have been studied. experimentalre...

Most microstructures are fabricated by photolithography, which needs masks to define the specific patterns, and the successive exposure, developing and etching steps. A maskless fabrication process has been developed on the other hand. The designed micro patterns are written on the specimen by laser guiding to build or repair micro structure rapidly rather than using the time-consuming mask fab...

Solid State Nuclear Track Detectors (SSNTDs) are well known for the detection of ionizing radiation through track formation of heavy ionizing particles. The LR-115 detector is a commonly used SSNTD for the detection and measurement of Rn and its progeny. Several techniques of track revelation are known but, the chemical etching technique is the most frequently used in which tracks can be made v...

Metal-assisted etching is initiated by hole injection from an oxidant catalyzed by a metal nanoparticle or film on a Si surface. It is shown that the electronic structure of the metal/Si interface, i.e., band bending, is not conducive to diffusion of the injected hole away from the metal in the case of Ag or away from the metal/Si interface in the cases of Au, Pd, and Pt. Since holes do not dif...

Automatic release and vertical transferring of silicon/silicon oxide nanowire arrays with a high integrity are demonstrated by an Ag-assisted ammonia etching method. By adding a water steaming step between Ag-assisted HF/H2O2 and ammonia etching to form a SiOx protective layer sheathing Si nanowires, we can tune the composition of the nanowires from SiOx (0 ≤ x ≤ 2) to Si nanowires. Ag plays a ...

Metal-assisted chemical etching (MACE) has emerged as an effective method to fabricate high aspect ratio nanostructures. This requires a catalytic mask that is generally composed of metal. Here, we challenge the general view catalyst needs be metal by introducing oxide-assisted (OACE). We perform with oxides such RuO2 and IrO2 transposing materials used in electrocatalysis nanofabrication. Thes...

The effect of the oxidizer present in etching solution on surface morphology and microstructure obtained after porosifying a p-type silicon wafer using metal-assisted chemical was studied. morphologies Si wafers porosified two different solutions, HF/H 2 O HF/KMnO 4 , were compared to establish how either oxidizers (H or KMnO ) should be chosen depending desired application. A comparative study...