In this paper the three new narrow bandgap D–A conjugated copolymers P1, P2 and P3 based on different weak donor fused thiophene-imidazole containing derivatives and the same benzothiadiazole acceptor unit were synthesized by Stille cross-coupling polymerization and characterized by 1H NMR, elemental analysis, GPC, TGA, DSC. These copolymers exhibit intensive absorbance in the range 350–900 nm ...

Emission characteristics of metal halide perovskites play a key role in the current widespread investigations into their potential uses in optoelectronics and photonics. However, a fundamental understanding of the molecular origin of the unusual blueshift of the bandgap and dual emission in perovskites is still lacking. In this direction, we investigated the extraordinary photoluminescence beha...

We studied the optical properties of as-prepared (amorphous) and thermally crystallized (fcc) flash evaporated Ge2Sb2Te5 thin films using variable angle spectroscopic ellipsometry in the photon energy range 0.54 4.13 eV. We employed Tauc-Lorentz model (TL) and CodyLorentz model (CL) for amorphous phase and Tauc-Lorentz model with one additional Gaussian oscillator for fcc phase data analysis. T...

We demonstrate a highly tunable deep notch filter realized in a liquid-crystal photonic-bandgap (LCPBG) fiber. The filter is realized without inducing a long-period grating in the fiber but simply by filling a solid-core photonic-crystal fiber with a liquid crystal and exploiting avoided crossings within the bandgap of the LCPBG fiber. The filter is demonstrated experimentally and investigated ...

Introduction Silicon has long been the semiconductor of choice for high-voltage power electronics applications. However, wide-bandgap semiconductors such as SiC and GaN have begun to attract attention because they are projected to have much better performance than silicon. In comparison with silicon, wide-bandgap semiconductors offer a lower intrinsic carrier concentration, a higher electric br...

The AC performance capabilities of Schottky-barrier carbon nanotube field-effect transistors are examined via simulations using a self-consistent Schrödinger-Poisson solver. It is shown that good high-frequency performance demands use of a small-bandgap nanotube, whereas good digitalswitching performance can be achieved with larger-bandgap tubes. For typical transistor geometries it is shown th...

We have fabricated microstructured polymer optical fibers that guide light in a hollow core using the photonic bandgap mechanism. The hollow core allows the use of polymer fibers to be extended to wavelength ranges where material absorption typically prohibits their use, with attenuation lower than the material loss observed in the infrared. The fabrication method is similar to other microstruc...

Novel physical phenomena can emerge in low-dimensional nanomaterials. Bulk MoS2, a prototypical metal dichalcogenide, is an indirect bandgap semiconductor with negligible photoluminescence. When the MoS2 crystal is thinned to monolayer, however, a strong photoluminescence emerges, indicating an indirect to direct bandgap transition in this d-electron system. This observation shows that quantum ...

We study experimentally an electrically pumped GaAs-based bandgap structure based on a vertical cavity surface emitting laser (VCSEL). We demonstrate that a microcavity embedded into this bandgap VCSEL structure supports localized optical modes without any holding beam. We propose a model of surface-structured VCSELs based on a reduced dissipative wave equation for describing electromagnetic mo...