As one of the most important n-type thermoelectric (TE) materials, Bi2Te3 has been studied for decades, with efforts to enhance performance based on element doping, band engineering, etc. In this study, we report a novel bulk-insulating topological material system as replacement materials: V doped Bi1.08Sn0.02Sb0.9Te2S (V:BSSTS) . The V:BSSTS is bulk insulator robust metallic surface states. Fu...

Improvements in the thermoelectric performance of n-type Bi2Te3 materials to more closely match their p-type counterparts are critical promote continued development bismuth telluride devices. Here unconventional heteroatom dopant, niobium, has been employed as a donor Bi2Te3. Nb substitutes for Bi rhombohedral structure and exhibits multiple roles its modulation electrical transport defect-indu...