نتایج جستجو برای: breakdown voltage

تعداد نتایج: 136077  

پایان نامه :وزارت علوم، تحقیقات و فناوری - دانشگاه صنعتی خواجه نصیرالدین طوسی - دانشکده مهندسی برق و کامپیوتر 1391

many mobile and off-grid devices include electronics and other electrical consumers like servo drives, which need a quite low supply power. since the price for photovoltaic modules drops continuously, photovoltaic power supply is interesting in more and more applications. in solar powered systems, a battery is needed to store energy for the night and cloudy periods. the power electronics of suc...

2006
Michael B. Partenskii Gennady V. Miloshevsky Peter C. Jordan

The effect of applied voltage V on local thickness fluctuations (LTF) in lipid bilayers is examined using the continuum model and accounting for non-locality of membrane elastic moduli. Ponderomotive forces, calculated from the linearized Poisson-Boltzmann equation, reduce LTF energy quadratically with V . Combined with a significant increase in the apex field gradient and perturbation of lipid...

2014
M. H. Ahmad N. Bashir H. Ahmad A. A. Abd Jamil A. A. Suleiman

Nowadays, the most widely used insulating materials in high voltage equipment such as cables are polymeric insulations due to the numerous merits they possess with regards to electrical performance compared to paper insulations. However, electrical treeing, one of the dielectric pre-breakdown phenomena, has been considered as a major contribution to the failure of insulating polymeric materials...

1998
P. G. NEUDECK

It is well-known that SiC wafer quality deficiencies are delaying the realization of outstandingly superior 4H-SiC power electronics. While efforts to date have centered on eradicating micropipes (i.e., hollow core super-screw dislocations with Burgers vector > 2c), 4H-SiC wafers and epilayers also contain elementary screw dislocations (i.e., Burgers vector = 1c with no hollow core) in densitie...

2001
Chester G. Wilson Yogesh B. Gianchandani Amy E. Wendt

In order to understand the details of high-field breakdown in microstructures that are vacuum packaged, a series of experiments are used to determine characteristics of microdischarges. The results support a reinterpretation of conventional assumptions based upon large scale discharges. When planar microelectrodes are used, Paschen’s curve is not applicable in the traditional sense: the breakdo...

2009
T. Seidl W. Ensinger E. Floch A. Golubev A. Plotnikov D. Tommasini C. Trautmann

During long-term operation of the new FAIR facility, parts of the superconducting magnets will be exposed to high radiation levels, cryogenic temperatures, and dynamic mechanical loads (Lorentzian forces during pulsed operation). Depending on the position of the different components, the radiation due to beam losses consists of a cocktail of gammas, neutrons, protons, and heavier particles [1]....

2017
Karine Isoird Frédéric Morancho L. Théolier H. Mahfoz-Kotb K. Isoird F. Morancho

Numerous techniques have been used to improve the voltage handling capability of high voltage power devices with the aim to obtain the breakdown of a plane junction. In this work, a new concept of low cost, low surface and high efficiency junction termination for power devices is presented and experimentally validated. This termination is based on a large and deep trench filled by BCB (BenzoCyc...

2006

This article presents some design guidelines for the RCD snubber of flyback converters. When the MOSFET turns off, a high-voltage spike occurs on the drain pin because of a resonance between the leakage inductor (Llk) of the main transformer and the output capacitor (COSS) of the MOSFET. The excessive voltage on the drain pin may lead to an avalanche breakdown and eventually damage the MOSFET. ...

2006

This article presents some design guidelines for the RCD snubber of flyback converters. When the MOSFET turns off, a high-voltage spike occurs on the drain pin because of a resonance between the leakage inductor (Llk) of the main transformer and the output capacitor (COSS) of the MOSFET. The excessive voltage on the drain pin may lead to an avalanche breakdown and eventually damage the MOSFET. ...

2013
Bart Sorgeloos Ilse Backers Benjamin Van Camp Olivier Marichal

The bipolar nature of ESD pulses such as MM introduces failure mechanisms that cannot be reproduced by TLP/HBM. A lowered breakdown voltage due to dynamic avalanching was observed. The key issue is that carriers injected during the first swing remain in the device after the current switches polarity. A case study for high-voltage diodes is presented.

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