The improvement of the physical properties of Indium Tin Oxide (ITO) layers is quite advantageous in photovoltaic applications. In this study the ITO film is deposited by RF sputtering onto p-type crystalline silicon (c-Si) with (100) orientation, multicrystalline silicon (mc-Si), and glass substrates coated with ZnO and annealed in vacuum furnace at 400°C. Electrical, optical, structural a...

Although a variety of wireless interfaces are available on mobile devices, they still provide only low throughput so far. When coverage areas of those different technologies overlap, mobile devices with multiple interfaces can use them simultaneously by mechanism of Bandwidth Aggregation. However, there are some performance problems for Bandwidth Aggregation on Network Layer and lower Layer whi...

Cheap and efficient white light-emitting diodes (LEDs) are of great interest due to the energy crisis all over the world. Herein, we have developed heterojunction LEDs based on the well-aligned ZnO nanorods and nanotubes on the p-type GaN with the insertion of the NiO buffer layer that showed enhancement in the light emission. Scanning electron microscopy have well demonstrated the arrays of th...

This paper reports the effects of the seed layers prepared by spin-coating and dip-coating methods on the morphology and density of ZnO nanowire arrays, thus on the performance of ZnO nanowire-based dye-sensitized solar cells (DSSCs). The nanowire films with the thick ZnO buffer layer (*0.8–1 lm thick) can improve the open circuit voltage of the DSSCs through suppressing carrier recombination, ...

Most of the researches have been concentrated on how to avoid and dissolve the network congestion, and only a few discussions on the performance improvement of the endhosts are recently made. We have already proposed a new architecture, which is called Scalable Socket Buffer Tuning (SSBT), to provide high performance and fair service for many TCP connections at the Internet endhosts. In this pa...

A thin buffer layer of cadmium oxide (CdO) was used to enhance the optical and electrical properties of indium tin oxide (ITO) films prepared by an electron-beam evaporation technique. The effects of the thickness and heat treatment of the CdO layer on the structural, optical and electrical properties of ITO films were carried out. It was found that the CdO layer with a thickness of 25 nm resul...

We report the anisotropic structural and optical properties of semi-polar (11-22) GaN grown on m-plane sapphire using a three-step growth method which consisted of a low temperature AlN buffer layer, followed by a high temperature AlN buffer layer and GaN growth. By introducing double AlN buffer layers, we substantially improve the crystal and optical qualities of semi-polar (11-22) GaN, and si...

An active spherically conformed liquid crystal cell is presented comprising PEDOT:PSS as a transparent conductive layer and obliquely evaporated SiO2 as an alignment layer. To tackle compatibility issues with the SU8 processing needed for the spacers, an additional buffer layer was included in the fabrication process. The electro-optic response is inspected closely and a contrast measurement is...

An approach for the controlled formation of thin strained silicon layers based on strain transfer in an epitaxial Si/SiGe/Sis100d heterostructure during the relaxation of the SiGe layer is established. He+ ion implantation and annealing is employed to initiate the relaxation process. The strain transfer between the two epilayers is explained as an inverse strain relaxation which we modeled in t...