In this paper, the performance of a CNT-JLTFET under different values of torsional strains of 0, 3, and 5 degrees has been investigated. Simulation has been carried out using non-equilibrium Green’s function (NEGF) formalism in the mode-space approach and in the ballistic limit. The simulation results indicate that, under torsional strain, an increase occurs in the energy band-gap, and thus the...

A carbon nanotube transistor array was used to detect DNA hybridization. A new approach to ensure specific adsorption of DNA to the nanotubes was developed. The polymer poly (methylmethacrylate(0.6)-co-poly(ethyleneglycol)methacrylate(0.15)-co-N-succinimidyl methacrylate(0.25)) was synthesized and bonded noncovalently to the nanotube. Aminated single-strand DNA was then attached covalently to t...

Torsional dynamic analysis of carbon nanotubes under the effect of longitudinal magnetic field is carried out in the present study. Torque effect of an axial magnetic field on a carbon nanotube has been defined using Maxwell’s relation. Nonlocal governing equation and boundary conditions for carbon nanotubes are obtained by using Hamilton’s minimum energy principle. Eringen’s nonlocal stress gr...

Coexistence of metallic and semiconducting carbon nanotubes in as-grown samples sets important limits to their application in high-performance electronics. We present the metal-to-semiconductor conversion of carbon nanotubes for field-effect transistors based on both aligned nanotubes and individual nanotube devices. The conversion process is induced by light irradiation, scalable to wafer-size...

The features of CNT (Nanotube Carbon) are fascinating to study due their unique structural and electrical capabilities. small structure the in Field-Effect Transistor technology can produce a smaller device with better performance. In this work, Taguchi method had been implemented optimize Carbon Nanotube (CNTFET). Minitab 19 software used carry out analysis. Three design parameters (diameter C...

The rediscovery and the memory application of single walled carbon nanotubes (SWNTs) give a new method in nanoelectronics applications. At first we will report the memory effects of a SWNT, and attempt to use this property in a memory device. To use a SWNT field effect transistor (FET) as a charge-storage memory device, the device operates by injecting electrons from the nanotube channel of a T...

| Carbon nanotube devices offer intrinsic advantages for high-performance logic device applications. The ultrasmall body of a carbon nanotubeVthe tube diameterVis the key feature that should allow aggressive channel length scaling, while the intrinsic transport properties of the nanotube ensure at the same time high on-currents. In addition, the narrowness of the tube is critical to implementat...

We demonstrate the intrinsic memory function of ferroelectric field-effect transistors (FeFETs) based on an integration of individual single-walled carbon nanotubes (SWCNTs) and epitaxial ferroelectric films. In contrast to the previously reported "charge-storage" CNT-FET memories, whose operations are haunted by a lack of control over the "charge traps", the present CNT-FeFETs exhibit a well-d...

In this paper, we propose and evaluate a novel design of a lightly doped drain and source carbon nanotube field effect transistor (LDDS-CNTFET) with a negative differential resistance (NDR) characteristic, called negative differential resistance LDDS-CNTFET (NDR-LDDS-CNTFET). The device was simulated by using a non equilibrium Green’s function method. To achieve this phenomenon, we have created...