نتایج جستجو برای: channel thickness
تعداد نتایج: 330602 فیلتر نتایج به سال:
A shear-induced structure (SIS) is formed under appropriate concentration and shear conditions in a surfactant micellar solution. In this study, we performed experiments of solution dosing fully developed two-dimensional turbulent channel flow from sintered metallic wire mesh plate attached to side wall. We investigated the behavior elongation during its passing through strong due flow. It was ...
A new method was developed to automatically measure the thickness of a single ventricular myocyte of guinea-pig heart. A fine marker was attached on the cell's upper surface and changes in its vertical position were measured by focusing it under the microscope. When the osmolarity of the bath solution was varied, the cell thickness reached a new steady level without any obvious regulatory volum...
Ultrathin ( 1.9 nm) nitride/oxide (N/O) dual layer gate dielectrics have been prepared by the remote plasma enhanced chemical vapor deposition (RPECVD) of Si3N4 onto oxides. Compared to PMOSFET’s with heavily doped p-poly-Si gates and oxide dielectrics, devices incorporating the RPECVD stacked nitrides display reduced tunneling current, effectively no boron penetration and improved interface ch...
The channel capacity of the indoor multiple input multiple output (MIMO) system is investigated with consideration of the effects of the wall by using a hybrid method of the finite difference time domain (FDTD) method and the method of moments (MoM). Firstly, the effects of wall material on indoor MIMO channel capacity are investigated according to the physical parameters of the wall, i.e. the ...
In this study, reaction-induced boundary movements in a thin channel are investigated. Here, precipitation-dissolution reactions taking place at the boundaries of the channel resulting in boundary movements act as a precursor to the clogging process. The resulting problem is a coupled ow-reactive transport process in a time-dependent geometry. We propose an ALE-based method (ALE arbitrary Lagra...
The stability in the operation of insulated gate bipolar transistor (IGBT) modules plays a crucial role wind power generation. It is essential to improve thermal performance heat sink IGBT converters and reduce consumption liquid cooling systems, order optimize dissipation converters. In this paper, simulation model liquid-cooled module established three different series flow channel structures...
Double Gate FinFET devices are suitable for nano electronic circuits due to better scalability, higher on-current (Ion), improved Sub-threshold Slope (SS) and undoped body (no random dopant fluctuation). Body thickness (TSi) increases the gate control over the channel resulting in reduced short channel effects (SCEs). Thin Tsi increases the quantum confinement of charge, resulting increased thr...
0167-9317/$ see front matter 2010 Elsevier B.V. A doi:10.1016/j.mee.2010.08.001 ⇑ Corresponding author. E-mail address: [email protected] (J. Kanick We report on the effects of back channel etch depth and etchant chemistry on the electrical characteristics of inverted staggered advanced amorphous silicon thin-film transistors. We found that the optimum amorphous silicon film thickness in t...
An electro-optic tunable single and multi-channel optical filter based on one-dimensional defective photonic crystal (1DDPC) structure is proposed. A couple of externally tunable defects in arrangement of (AB)5D1(BA)D2(BA)5, where A and B are dielectric materials, D1 and D2 are the tunable defects are used. The defects are composed of the ferroelectric LiNbO3 crystals and two pairs of thin Ag l...
In this paper, we propose and evaluate a novel design of a lightly doped drain and source carbon nanotube field effect transistor (LDDS-CNTFET) with a negative differential resistance (NDR) characteristic, called negative differential resistance LDDS-CNTFET (NDR-LDDS-CNTFET). The device was simulated by using a non equilibrium Green’s function method. To achieve this phenomenon, we have created...
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